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We demonstrate that X-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al$_{0.35}$Ga$_{0.65}$As, a semiconductor with {it DX} centers. The excitation mechanism of the {it DX} centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident X-ray energy exhibits an edge both at the Ga and As K-edge, implying that core-hole excitation of Ga and As are efficient primary steps for the excitation of {it DX} centers. A high quantum yield ($gg 1$) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons.
A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP o
Experiments on resonances of conduction electrons in InGaAs/InAlAs double quantum wells at megagauss magnetic fields in the Faraday geometry are reported. We observe new cyclotron resonances assisted by emission of InAs-like and GaAs-like optic phono
The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, th
$beta$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $g
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase