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Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice, materials with a high spin Hall angle, i.e., a charge-to-spin conversion efficiency, are indispensable. To date, very few approaches have been made to devise new nonmagnetic metal alloys. Moreover, new materials need to be compatible with semiconductor processing. Here we introduce W-Ta and W-V alloys and deploy them at the interface between $beta$-W/CoFeB layers. First, spin Hall conductivities of W-Ta and W-V structures with various compositions are carried out by first-principles band calculations, which predict the spin Hall conductivity of the W-V alloy is improved from $-0.82 times 10^3$ S/cm that of W to $-1.98 times 10^3$ S/cm. Subsequently, heterostructure fabrication and spin-orbit torque properties are characterized experimentally. By alloying $beta$-W with V at a concentration of 20 at%, we observe a large enhancement of the absolute value of spin Hall conductivity of up to $-(2.77 pm 0.31) times 10^3$ S/cm. By employing X-ray diffraction and scanning transmission electron microscopy, we further explain the enhancement of spin-orbit torque efficiency is stemmed from W-V alloy between W and CoFeB.
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the charge-to-spin
The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA)
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage ad
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called
Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit tor