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This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the stochastic behavior of MTJs and to generate Verilog-A compact models for their simulation in large VLSI designs, addressing the need for an industry-ready model accounting for real-world reliability and scalability requirements. Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky (s-LLGS ) stochastic magnetization considering Voltage-Controlled Magnetic Anisotropy (VCMA) and the non-negligible statistical effects caused by thermal noise. Model behavior is validated against the OOMMF magnetic simulator and its performance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memory product.
Magnetic Tunnel Junctions (MTJs) constitute the novel memory element in STT-MRAM, which is ramping to production at major foundries as an eFlash replacement. MTJ switching exhibits a stochastic behavior due to thermal fluctuations, which is modeled b
We report the performance characteristics of a notional Convolutional Neural Network based on the previously-proposed Multiply-Accumulate-Activate-Pool set, an MTJ-based spintronic circuit made to compute multiple neural functionalities in parallel.
We propose a dedicated winner-take-all circuit to efficiently implement the intra-column competition between cells in Hierarchical Temporal Memory which is a crucial part of the algorithm. All inputs and outputs are charge-based for compatibility wit
We propose a new network architecture for standard spin-Hall magnetic tunnel junction-based spintronic neurons that allows them to compute multiple critical convolutional neural network functionalities simultaneously and in parallel, saving space and
This work presents a novel general compact model for 7nm technology node devices like FinFETs. As an extension of previous conventional compact model that based on some less accurate elements including one-dimensional Poisson equation for three-dimen