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Quantum dots are recognized as a suitable platform for studying thermodynamic phenomena involving single electronic charges and spins in nano-scale devices. However, such a thermodynamic system is usually driven by electron reservoirs at different temperatures, not by a lattice temperature gradient. We report on experimental observations of charge-spin cooperative dynamics in transitions of two-electron spin states in a GaAs double quantum dot located in a non-equilibrium phonon environment. Enhancements in the spin-flip processes are observed, originating from phonon excitation combined with the spin-orbit interaction. In addition, due to the spatial gradient of phonon density between the dots, the spin-flip rate during an inter-dot electron tunnel from a hot to a cold dot is more enhanced than in the other direction, resulting in accumulation of parallel spin states in the double dot.
The spreading of a bilayer gold film propagating outward from gold clusters, which are pinned to clean Si(111), is imaged in real time by low energy electron microscopy. By monitoring the evolution of the boundary of the gold film at fixed temperatur
Magnetic skyrmion is a promising building block for developing information storage and computing devices. It can be stabilized in a ferromagnetic thin film with the Dzyaloshinskii-Moriya interaction (DMI). The moving ferromagnetic skyrmion may show t
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by electrically induced
The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for potential spin
Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic in