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We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined states : insulating, normal conduction and resonant conduction.
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and tunnel coupli
Motivated by recent developments on the fabrication and control of semiconductor-based quantum dot qubits, we theoretically study a finite system of tunnel-coupled quantum dots with the electrons interacting through the long-range Coulomb interaction
Numerical analysis of the simplest odd-numbered system of coupled quantum dots reveals an interplay between magnetic ordering, charge fluctuations and the tendency of itinerant electrons in the leads to screen magnetic moments. The transition from lo
A dilute concentration of magnetic impurities can dramatically affect the transport properties of an otherwise pure metal. This phenomenon, known as the Kondo effect, originates from the interactions of individual magnetic impurities with the conduct
We study the heat current through two capacitively coupled quantum dots coupled in series with two conducting leads at different temperatures $T_L$ and $T_R$ in the spinless case (valid for a high applied magnetic field). Our results are also valid f