ﻻ يوجد ملخص باللغة العربية
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and tunnel coupling. In the regime of capacitive coupling we observe the phenomenon of spin blockade in a magnetic field and analyze the influence of capacitive interdot coupling on this effect.
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic
We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot
We report Pauli spin blockade in an impurity defined carbon nanotube double quantum dot. We observe a pronounced current suppression for negative source-drain bias voltages which is investigated for both symmetric and asymmetric coupling of the quant
We investigate the influence of thermal energy on the current flow and electron spin states in double quantum dots in series. The quadruplet Pauli spin blockade, which is caused by the quadruplet and doublet states, occurs at low temperatures affecti
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm tha