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We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($Tapprox 100$~mK), as a function of external magnetic field $B_0$ and donor electrochemical potential $mu_{rm D}$. We observe a magnetic field dependence of the form $1/T_1propto B_0^5$ for $B_0gtrsim 3,$ T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For $B_0lesssim 3,$T, the relaxation rate changes to $1/T_1propto B_0$ for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where $T_1>1,$s, we also observe and quantify the spurious increase of $1/T_1$ when the electrochemical potential of the spin excited state $|uparrowrangle$ comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to $|downarrowrangle$. These results give precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes.
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite t
We report on imaging of microwave (MW) magnetic fields using a magnetometer based on the electron spin of a nitrogen vacancy center in diamond. We quantitatively image the magnetic field generated by high frequency (GHz) MW current with nanoscale res
An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electrons spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a
We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin relaxation times ar
Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long coherence times i