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Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to below 1 Hz, deduced from the random telegraph signal. The demonstration of tunable coupling between single electrons in a silicon metal-oxide-semiconductor device provides significant scope for high-fidelity two-qubit logic toward quantum information processing with standard manufacturing.
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages appl
We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by
The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modula
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high fidelity. Howeve
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the envi