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Silicon photomultipliers (SiPM) are solid state light detectors with sensitivity to single photons. Their use in high energy physics experiments, and in particular in ring imaging Cherenkov (RICH) detectors, is hindered by their poor tolerance to radiation. At room temperature the large increase in dark count rate makes single photon detection practically impossible already at 10$^{11}$ cm$^{-2}$ 1-MeV-equivalent neutron fluence. The neutron fluences foreseen by many subdetectors to be operated at the high luminosity LHC range up to 10$^{14}$ cm$^{-2}$ 1-MeV-equivalent. In this paper we present the effects of such high neutron fluences on Hamamatsu and SensL SiPMs of different cell size. The advantage of annealing at high temperature (up to 175 $^{circ}$C) is discussed. We demonstrate that, after annealing, operation at the single photon level with a SiPM irradiated up to 10$^{14}$ cm$^{-2}$ 1-MeV-equivalent neutron fluence is possible at cryogenic temperature (77 K) with a dark count rate below 1~kHz.
Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at high-luminosity
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We report results from the testing of 35 {mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {mu}m thick UFSD produced by HPK. The 35 {mu}m