ﻻ يوجد ملخص باللغة العربية
The coupling between longitudinal optical (LO) phonons and plasmons plays a fundamental role in determining the performance of doped semiconductor devices. In this work, we report a comparative investigation into the dependence of the coupling on temperature and doping in n- and p-type GaAs by using ultrafast optical phonon spectroscopy. A suppression of coherent oscillations has been observed in p-type GaAs at lower temperature, strikingly different from n-type GaAs and other materials in which coherent oscillations are strongly enhanced by cooling. We attribute this unexpected observation to a cooling-induced elongation of the depth of the depletion layer which effectively increases the screening time of surface field due to a slow diffusion of photoexcited carriers in p-type GaAs. Such an increase breaks the requirement for the generation of coherent LO phonons and, in turn, LO phonon-plasmon coupled modes because of their delayed formation in time.
We report time- and angle-resolved photoemission spectroscopy measurements on the Sb(111) surface. We observe band- and momentum-dependent binding-energy oscillations in the bulk and surface bands driven by $A_{1g}$ and $E_{g}$ coherent phonons. Whil
Coherent control experiments using a pair of collinear femtosecond laser pulses have been carried out to manipulate longitudinal optical (LO) phonon-plasmon coupled (LOPC) modes in both p- and n-type GaAs. By tuning the interpulse separation, remarka
The interaction between magnetic and acoustic excitations have recently inspired many interdisciplinary studies ranging from fundamental physics to circuit implementation. Specifically, the exploration of their coherent interconversion enabled via th
Spin and lattice dynamics of CaMn7O12 ceramics were investigated using infrared, THz and inelastic neutron scattering (INS) spectroscopies in the temperature range 2 to 590 K, and, at low temperatures, in applied magnetic fields of up to 12 T. On coo
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and phot