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Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic 1), positive low (logic 0), or negative (logic 0), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories hav
Slime mould of Physarum polycephalum is a large cell exhibiting rich spatial non-linear electrical characteristics. We exploit the electrical properties of the slime mould to implement logic gates using a flexible hardware platform designed for inves
A new spintronic nonvolatile memory cell analogous to 1T DRAM with non-destructive read is proposed. The cells can be used as neural computing units. A dual-circuit neural network architecture is proposed to leverage these devices against the complex
Traditional silicon binary circuits continue to face challenges such as high leakage power dissipation and large area of interconnections. Multiple-Valued Logic (MVL) and nano devices are two feasible solutions to overcome these problems. In this pap
Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear array of