اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDiscovering Boolean Gates in Slime Mould
114
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Slime mould of Physarum polycephalum is a large cell exhibiting rich spatial non-linear electrical characteristics. We exploit the electrical properties of the slime mould to implement logic gates using a flexible hardware platform designed for investigating the electrical properties of a substrate (MECOBO). We apply arbitrary electrical signals to `configure the slime mould, i.e. change shape of its body and, measure the slime moulds electrical response. We show that it is possible to find configurations that allow the Physarum to act as any 2-input Boolean gate. The occurrence frequency of the gates discovered in the slime was analysed and compared to complexity hierarchies of logical gates obtained in other unconventional materials. The search for gates was performed by both sweeping across configurations in the real material as well as training a neural network-based model and searching the gates therein using gradient descent.
قيم البحث
اقرأ أيضاً
Plasmodium of Physarum polycephalum is a single cell visible by unaided eye. During its foraging behavior the cell spans spatially distributed sources of nutrients with a protoplasmic network. Geometrical structure of the protoplasmic networks allows
the plasmodium to optimize transport of nutrients between remote parts of its body. Assuming major Mexican cities are sources of nutrients how much structure of Physarum protoplasmic network correspond to structure of Mexican Federal highway network? To find an answer undertook a series of laboratory experiments with living Physarum polycephalum. We represent geographical locations of major cities by oat flakes, place a piece of plasmodium in Mexico city area, record the plasmodiums foraging behavior and extract topology of nutrient transport networks. Results of our experiments show that the protoplasmic network formed by Physarum is isomorphic, subject to limitations imposed, to a network of principle highways. Ideas and results of the paper may contribute towards future developments in bio-inspired road planning.
Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that nonvolatile lo
gic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X1, X2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic 1), positive low (logic 0), or negative (logic 0), depending on the levels of X1 and X2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.
Efficient solutions to NP-complete problems would significantly benefit both science and industry. However, such problems are intractable on digital computers based on the von Neumann architecture, thus creating the need for alternative solutions to
tackle such problems. Recently, a deterministic, continuous-time dynamical system (CTDS) was proposed (Nat.Phys. {bf 7}(12), 966 (2011)) to solve a representative NP-complete problem, Boolean Satisfiability (SAT). This solver shows polynomial analog time-complexity on even the hardest benchmark $k$-SAT ($k geq 3$) formulas, but at an energy cost through exponentially driven auxiliary variables. This paper presents a novel analog hardware SAT solver, AC-SAT, implementing the CTDS via incorporating novel, analog circuit design ideas. AC-SAT is intended to be used as a co-processor and is programmable for handling different problem specifications. It is especially effective for solving hard $k$-SAT problem instances that are challenging for algorithms running on digital machines. Furthermore, with its modular design, AC-SAT can readily be extended to solve larger size problems, while the size of the circuit grows linearly with the product of the number of variables and number of clauses. The circuit is designed and simulated based on a 32nm CMOS technology. SPICE simulation results show speedup factors of $sim$10$^4$ on even the hardest 3-SAT problems, when compared with a state-of-the-art SAT solver on digital computers. As an example, for hard problems with $N=50$ variables and $M=212$ clauses, solutions are found within from a few $ns$ to a few hundred $ns$.
Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the underlying te
xtit{von-Neumann} computing architecture has remained unchanged. The limited throughput and energy-efficiency of the state-of-art computing systems, to a large extent, results from the well-known textit{von-Neumann bottleneck}. The energy and throughput inefficiency of the von-Neumann machines have been accentuated in recent times due to the present emphasis on data-intensive applications like artificial intelligence, machine learning textit{etc}. A possible approach towards mitigating the overhead associated with the von-Neumann bottleneck is to enable textit{in-memory} Boolean computations. In this manuscript, we present an augmented version of the conventional SRAM bit-cells, called textit{the X-SRAM}, with the ability to perform in-memory, vector Boolean computations, in addition to the usual memory storage operations. We propose at least six different schemes for enabling in-memory vector computations including NAND, NOR, IMP (implication), XOR logic gates with respect to different bit-cell topologies $-$ the 8T cell and the 8$^+$T Differential cell. In addition, we also present a novel textit{`read-compute-store} scheme, wherein the computed Boolean function can be directly stored in the memory without the need of latching the data and carrying out a subsequent write operation. The feasibility of the proposed schemes has been verified using predictive transistor models and Monte-Carlo variation analysis.
Boolean satisfiability is a propositional logic problem of interest in multiple fields, e.g., physics, mathematics, and computer science. Beyond a field of research, instances of the SAT problem, as it is known, require efficient solution methods in
a variety of applications. It is the decision problem of determining whether a Boolean formula has a satisfying assignment, believed to require exponentially growing time for an algorithm to solve for the worst-case instances. Yet, the efficient solution of many classes of Boolean formulae eludes even the most successful algorithms, not only for the worst-case scenarios, but also for typical-case instances. Here, we introduce a memory-assisted physical system (a digital memcomputing machine) that, when its non-linear ordinary differential equations are integrated numerically, shows evidence for polynomially-bounded scalability while solving hard planted-solution instances of SAT, known to require exponential time to solve in the typical case for both complete and incomplete algorithms. Furthermore, we analytically demonstrate that the physical system can efficiently solve the SAT problem in continuous time, without the need to introduce chaos or an exponentially growing energy. The efficiency of the simulations is related to the collective dynamical properties of the original physical system that persist in the numerical integration to robustly guide the solution search even in the presence of numerical errors. We anticipate our results to broaden research directions in physics-inspired computing paradigms ranging from theory to application, from simulation to hardware implementation.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
