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تسجيل مستخدم جديدMultiple Dirac cones at the surface of the topological metal LaBi
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The rare-earth monopnictide LaBi exhibits exotic magneto-transport properties including an extremely large and anisotropic magnetoresistance. Experimental evidence for topological surface states is still missing although band
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Transition-metal dichalcogenides (TMDs) are renowned for their rich and varied properties. They range from metals and superconductors to strongly spin-orbit-coupled semiconductors and charge-density-wave systems, with their single-layer variants one
of the most prominent current examples of two-dimensional materials beyond graphene. Their varied ground states largely depend on the transition metal d-electron-derived electronic states, on which the vast majority of attention has been concentrated to date. Here, we focus on the chalcogen-derived states. From density-functional theory calculations together with spin- and angle- resolved photoemission, we find that these generically host type-II three-dimensional bulk Dirac fermions as well as ladders of topological surface states and surface resonances. We demonstrate how these naturally arise within a single p-orbital manifold as a general consequence of a trigonal crystal field, and as such can be expected across a large number of compounds. Already, we demonstrate their existence in six separate TMDs, opening routes to tune, and ultimately exploit, their topological physics.
By employing angle-resolved photoemission spectroscopy combined with first-principles calculations, we performed a systematic investigation on the electronic structure of LaBi, which exhibits extremely large magnetoresistance (XMR), and is theoretica
lly predicted to possess band anticrossing with nontrivial topological properties. Here, the observations of the Fermi-surface topology and band dispersions are similar to previous studies on LaSb [Phys. Rev. Lett. 117, 127204 (2016)], a topologically trivial XMR semimetal, except the existence of a band inversion along the $Gamma$-$X$ direction, with one massless and one gapped Dirac-like surface state at the $X$ and $Gamma$ points, respectively. The odd number of massless Dirac cones suggests that LaBi is analogous to the time-reversal $Z_2$ nontrivial topological insulator. These findings open up a new series for exploring novel topological states and investigating their evolution from the perspective of topological phase transition within the family of rare-earth monopnictides.
Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological
insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons with TI samples with varying Fermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of charge carriers in the topologically-protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (few picoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effects for increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THz nonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.
We use high-resolution, tunable angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations to study the electronic properties of single crystals of MnBi2Te4, a material that was predicted to be the first intrin
sic antiferromagnetic (AFM) topological insulator. We observe both bulk and surface bands in the electronic spectra, in reasonable agreement with the DFT calculations results. In striking contrast to the earlier literatures showing a full gap opening between two surface band manifolds along (0001) direction, we observed a gapless Dirac cone remain protected in MnBi2Te4 across the AFM transition (TN = 24 K). Our data also reveal the existence of a second Dirac cone closer to the Fermi level, predicted by band structure calculations. Whereas the surface Dirac cones seem to be remarkably insensitive to the AFM ordering, we do observe splitting of the bulk band that develops below the TN . Having a moderately high ordering temperature, MnBi2Te4 provides a unique platform for studying the interplay between topology and magnetic ordering.
The presence of inherently strong spin-orbit coupling in bismuth, its unique layer-dependent band topology and high carrier mobility make it an interesting system for both fundamental studies and applications. Theoretically, it has been suggested tha
t strong quantum size effects should be present in the Bi(110) films, with the possibility of Dirac fermion states in the odd-bilayer (BL) films, originating from dangling $p_z$ orbitals and quantum-spin hall (QSH) states in the even-bilayer films. However, the experimental verification of these claims has been lacking. Here, we study the electronic structure of Bi(110) films grown on a high-$T_c$ superconductor, Bi$_2$Sr$_2$CaCu$_2$O$_{8+delta}$ (Bi2212) using angle-resolved photoemission spectroscopy (ARPES). We observe an oscillatory behavior of electronic structure with the film thickness and identify the Dirac-states in the odd-bilayer films, consistent with the theoretical predictions. In the even-bilayer films, we find another Dirac state that was predicted to play a crucial role in the QSH effect. In the low thickness limit, we observe several extremely one-dimensional states, probably originating from the edge-states of Bi(110) islands. Our results provide a much needed experimental insight into the electronic and structural properties of Bi(110) films.
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