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We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser doping technique used, Gas Immersion Laser Doping, we could attain extremely large doping levels above the solubility limit, and thus reduce the metal/doped Ge contact resistance. We tested independently the influence of the doping concentration and doped layer thickness, and showed that the ohmic contact improves when increasing the doping level and is not affected when changing the doped thickness. Furthermore, we characterised the doped Ge/Ge contact, showing that at high doping its contact resistance is the dominant contribution to the total contact resistance.
The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/$n$-Ge(110) interface are investigated on the l
Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while preserving its
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of heavily doped 110 um 4H-
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carri
Current voltage and Kelvin Probe Force Microscopy (KPFM) measurements were performed on single ZnO nanowires. Measurements are shown to be strongly correlated with the contact behavior, either ohmic or Schottky. The ZnO nanowires were obtained by met