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The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows exc
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and
This article describes a new charged-particle track fitting algorithm designed for use in high-speed electronics applications such as hardware-based triggers in high-energy physics experiments. Following a novel technique designed for fast electronic
A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time resolution of Lo