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تسجيل مستخدم جديدFirst FBK Production of 50$mu$m Ultra-Fast Silicon Detectors
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Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $phi sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.
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The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and
in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows exc
ellent time measurement for impinging minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a strong impact on the achievable time resolution. We present the result of measurements for LGADs of thickness between 20 micro-m and 50 micro-m. The data are fit to a formula that captures the impact of both electronic jitter and Landau fluctuations on the time resolution. The data illustrate the importance of having a saturated electron drift velocity and a large signal-to-noise in order to achieve good time resolution. Sensors of 20 micro-m thickness offer the potential of 10 to 15 ps time resolution per measurement, a significant improvement over the value for the 50 micro-m sensors that have been typically used to date.
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD
) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 {mu}m) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. Th
e first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGAD-based devices.
Scintillating NaI(Tl) crystals are widely used in a large variety of experimental applications. However, for the use as Dark Matter (DM) detectors, such crystals demand a high level of radio-purity, not achievable by means of standard industrial tech
niques. One of the main difficulties comes from the presence of potassium that always accompanies sodium in alkali halides. On the other hand, the arguable DM detection by DAMA experiment using NaI(Tl) scintillating crystals requires a reliable verification able to either confirm the existence of DM or rule out the DAMA claim. Ultra-low radioactivity NaI(Tl) crystals, particularly with very low potassium content, are therefore indispensable to overcome the current stalemate in Dark Matter searches. Nonetheless, apart from DAMA-LIBRA experiments, to date, no other experiment has succeeded in building a detector from NaI(Tl) crystals with potassium content of ppb level. This work describes recent results in the preparation of ultra-radio-pure NaI(Tl) crystals using a modified Bridgman method. A double-walled platinum crucible technique has been designed and reliability tests show that 5 ppb of potassium in the NaI(Tl) crystals of 2 and 3 inches in diameter can be achieved starting from NaI powder with potassium content of the order of 10 ppb. The potassium excess is segregated in the tail-side of the as grown ingot where measured potassium concentration is above 20 ppb. The purifying effect of Bridgman growth for larger NaI(Tl) crystals is currently being tested. The work also reports on scintillation parameters of our NaI(Tl) crystals measured in a dedicated setup conceived for naked, hygroscopic crystals. The reproducible and reliable production of ultra-low radioactivity NaI(Tl) crystals reported in this work will hopefully spur the construction of new DM search experiments and, anyway, clarify the controversial DAMA-LIBRA results.
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