ﻻ يوجد ملخص باللغة العربية
We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we observe conductance minima at all integer filling factors nu between 0 and -8, as well as a small plateau at { u}=1/3. For trilayer devices, we observe features at nu=-1, -2, -3 and -4, and at { u}~0.5 that persist to 4.5K at B=8T. All of these features persist for all accessible values of Vg and B, and could suggest the onset of symmetry breaking of the first few Landau (LL) levels and fractional quantum Hall states.
We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally derived ba
We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electri
We report the observation of superconductivity in rhombohedral trilayer graphene electrostatically doped with holes. Superconductivity occurs in two distinct regions within the space of gate-tuned charge carrier density and applied electric displacem
We study the symmetries of twisted trilayer graphenes band structure under various extrinsic perturbations, and analyze the role of long-range electron-electron interactions near the first magic angle. The electronic structure is modified by these in
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorders effects are confined to only one of the g