ﻻ يوجد ملخص باللغة العربية
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorders effects are confined to only one of the graphene layers. This effect is based on the bias voltages ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies as well a
A theoretical study of the magnetoelectronic properties of zigzag and armchair bilayer graphene nanoribbons (BGNs) is presented. Using the recursive Greens function method, we study the band structure of BGNs in uniform perpendicular magnetic fields
We investigate the electronic transport properties of unbiased and biased bilayer graphene nanoribbon in n-p and n-n junctions subject to a perpendicular magnetic field. Using the non-equilibrium Greens function method and the Landauer-B{u}ttiker for
We calculate the conductance of a two-dimensional bilayer with inverted electron-hole bands, to study the sensitivity of the quantum spin Hall insulator (with helical edge conduction) to the combination of electrostatic disorder and a perpendicular m
When light is incident on a medium with spatially disordered index of refraction, interference effects lead to near-perfect reflection when the number of dielectric interfaces is large, so that the medium becomes a transparent mirror. We investigate