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تسجيل مستخدم جديدImprovement and protection of niobium surface superconductivity by Atomic Layer Deposition and heat treatment
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T. Proslier
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A method to treat the surface of Nb is described which potentially can improve the performance of superconducting RF cavities. We present tunneling and x-ray photoemission spectroscopy (XPS) measurements at the surface of cavity-grade niobium samples coated with a 3 nm alumina overlayer deposited by Atomic Layer Deposition (ALD). The coated samples baked in ultra high vacuum (UHV) at low temperature reveal at first degraded superconducting surface. However, at temperatures above 450C, the tunneling conductance curves show significant improvements of the superconducting density of states (DOS) compared with untreated surfaces.
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Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath the tunnel
barrier. An IL up to 2 nm forms between ALD Al2O3 and Al. However, the IL thickness is unknown for ALD films less 1 nm. In this work, Nb-Al-ALD-Al2O3-Nb trilayers with tunnel barriers from 0.6 - 1.6 nm were grown in situ. Nb-Al-AlOx-Nb JJs with thermally oxidized tunnel barrier were produced for reference. RN was obtained using a four-point method at 300 K. JC, and its dependence on barrier thickness, was calculated from the Ambegaokar-Baratoff formula. The Al surface was modeled using ab initio molecular dynamics to study the nucleation of Al2O3 on Al. Current voltage characteristics were taken at 4 K to corroborate the room temperature measurements. Together, these results suggest that ALD may be used to grow an ultrathin, uniform tunnel barrier with controllable tunnel resistance and JC, but a thin IL develops during the nucleation stage of ALD growth that may disqualify Al as a suitable wetting layer for ALD JJ based qubits.
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In the past decade, nanopores have been developed extensively for various potential applications, and their performance greatly depends on the surface properties of the nanopores. Atomic layer deposition (ALD) is a new technology for depositing thin
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