ﻻ يوجد ملخص باللغة العربية
We study the absorption and emission polarization of single semiconductor quantum dots in semiconductor nanowires. We show that the polarization of light absorbed or emitted by a nanowire quantum dot strongly depends on the orientation of the nanowire with respect to the directions along which light is incident or emitted. Light is preferentially linearly polarized when directed perpendicular to the nanowire elongation. In contrast, the degree of linear polarization is low for light directed along the nanowire. This result is vital for photonic applications based on intrinsic properties of quantum dots, such as generation of entangled photons. As an example, we demonstrate optical access to the spin states of a single nanowire quantum dot.
We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was observed for var
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots
We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating
A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as In-Ga intermix
The electronic states of lateral many electron quantum dots in high magnetic fields are analyzed in terms of energy and spin. In a regime with two Landau levels in the dot, several Coulomb blockade peaks are measured. A zig-zag pattern is found as it