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We report on transport properties of millimetric super-lattices of CoFe nanoparticles surrounded by organic ligands. R(T)s follow R(T) = R_0.exp(T/T_0)^0.5 with T_0 ranging from 13 to 256 K. At low temperature I(V)s follow I=K[(V-V_T)/V_T]^ksi with ksi ranging 3.5 to 5.2. I(V) superpose on a universal curve when shifted by a voltage proportional to the temperature. Between 1.8 and 10 K a high-field magnetoresistance with large amplitude and a strong voltage-dependence is observed. Its amplitude only depends on the magnetic field/temperature ratio. Its origin is attributed to the presence of paramagnetic states present at the surface or between the nanoparticles. Below 1.8 K, this high-field magnetoresistance abruptly disappears and inverse tunnelling magnetoresistance is observed, the amplitude of which does not exceed 1%. At this low temperature, some samples display in their I(V) characteristics abrupt and hysteretic transitions between the Coulomb blockade regime and the conductive regime. The increase of the current during these transitions can be as high as a factor 30. The electrical noise increases when the sample is near the transition. The application of a magnetic field decreases the voltage at which these transitions occur so magnetic-field induced transitions are also observed. Depending on the applied voltage, the temperature and the amplitude of the magnetic field, the magnetic-field induced transitions are either reversible or irreversible. These abrupt and hysteretic transitions are also observed in resistance-temperature measurements. They could be the soliton avalanches predicted by Sverdlov et al. [Phys. Rev. B 64, 041302 (R), 2001] or could also be interpreted as a true phase transition between a Coulomb glass phase to a liquid phase of electrons.
Naturally occurring spin-valve-type magnetoresistance (SVMR), recently observed in Sr2FeMoO6 samples, suggests the possibility of decoupling the maximal resistance from the coercivity of the sample. Here we present the evidence that SVMR can be engin
We develop a theory of the reversible switching of the magnetic state of the ferromagnet-insulator-normal metalferromagnet (FINF) nanostructure. The switching is controlled by tuning the Coulomb blockade strength via the gate voltage on the normal me
This article was withdrawn by the authors due to misinterpretation of experimental data.
We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the Co
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is obs