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تسجيل مستخدم جديدImmense tunnel magnetoresistance mediated by Coulomb blockade effect and current-driven magnetization reversal in Co clusters embedded in a TiO2 matrix
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This article was withdrawn by the authors due to misinterpretation of experimental data.
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Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C are found
to be as low as 7.8 x 10^5 A/cm^2 and 8.8 x 10^5 A/cm^2 with accompanying tunnel magnetoresistance (TMR) ratios of 49% and 73 %, respectively. Further annealing of the samples at 350C increases TMR ratio to 160 %, while accompanying Jc increases to 2.5 x 10^6 A/cm^2. We attribute the low Jc to the high spin-polarization of tunnel current and small MsV product of the CoFeB single free layer, where Ms is the saturation magnetization and V the volume of the free layer.
We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom elect
rode in the junction area. Room temperature resistance mapping over a 150 mm wafer give local deviation values of the tunnel junction resistance that fall below 7.5 % with an average of 1.3 %. The deviation is further investigated by sub-1 K measurements of a device, which has one tunnel junction connected to four arrays consisting of N junctions (N = 41, junction diameter 700 nm). The differential conductance is measured in single-junction and array Coulomb blockade thermometer operation modes. By fitting the experimental data to the theoretical models we found an upper limit for the local tunnel junction resistance deviation of ~5 % for the array of 2N+1 junctions. This value is of the same order as the minimum detectable deviation defined by the accuracy of our experimental setup.
We report on transport properties of millimetric super-lattices of CoFe nanoparticles surrounded by organic ligands. R(T)s follow R(T) = R_0.exp(T/T_0)^0.5 with T_0 ranging from 13 to 256 K. At low temperature I(V)s follow I=K[(V-V_T)/V_T]^ksi with k
si ranging 3.5 to 5.2. I(V) superpose on a universal curve when shifted by a voltage proportional to the temperature. Between 1.8 and 10 K a high-field magnetoresistance with large amplitude and a strong voltage-dependence is observed. Its amplitude only depends on the magnetic field/temperature ratio. Its origin is attributed to the presence of paramagnetic states present at the surface or between the nanoparticles. Below 1.8 K, this high-field magnetoresistance abruptly disappears and inverse tunnelling magnetoresistance is observed, the amplitude of which does not exceed 1%. At this low temperature, some samples display in their I(V) characteristics abrupt and hysteretic transitions between the Coulomb blockade regime and the conductive regime. The increase of the current during these transitions can be as high as a factor 30. The electrical noise increases when the sample is near the transition. The application of a magnetic field decreases the voltage at which these transitions occur so magnetic-field induced transitions are also observed. Depending on the applied voltage, the temperature and the amplitude of the magnetic field, the magnetic-field induced transitions are either reversible or irreversible. These abrupt and hysteretic transitions are also observed in resistance-temperature measurements. They could be the soliton avalanches predicted by Sverdlov et al. [Phys. Rev. B 64, 041302 (R), 2001] or could also be interpreted as a true phase transition between a Coulomb glass phase to a liquid phase of electrons.
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy i
n the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Delta$. Although the larger storage layer thickness improves $Delta$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $Delta$ while keeping a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $Delta$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios.
Co$_2$FeSi(100) films with L2$_1$ structure deposited onto MgO(100) were studied exploiting both longitudinal (LMOKE) and quadratic (QMOKE) magneto-optical Kerr effect. The films exhibit a huge QMOKE signal with a maximum contribution of up to 30 mde
g, which is the largest QMOKE signal in reflection that has been measured thus far. This large value is a fingerprint of an exceptionally large spin-orbit coupling of second or higher order. The Co$_2$FeSi(100) films exhibit a rather large coercivity of 350 and 70 Oe for film thicknesses of 22 and 98 nm, respectively. Despite the fact that the films are epitaxial, they do not provide an angular dependence of the anisotropy and the remanence in excess of 1% and 2%, respectively.
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