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The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors.
We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magn
We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of
We report a comprehensive investigation of the structural, magnetic, transport and thermodynamic properties of a single crystal PrAlSi, in comparison to its nonmagnetic analogue LaAlSi. PrAlSi exhibits a ferromagnetic transition at $T_C$ = 17.8 K whi
We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a non-equilibrium hole
We have performed a systematic magneto-optical Kerr spectroscopy study of GaMnAs with varying Mn densities as a function of temperature, magnetic field, and photon energy. Unlike previous studies, the magnetization easy axis was perpendicular to the