ﻻ يوجد ملخص باللغة العربية
While an ideal antiparallel ferroelectric wall is considered a unit cell in width (~0.5nm), we show using phase field modeling that the threshold field for moving this wall dramatically drops by 2-3 orders of magnitude if the wall were diffuse by only ~2-3nm. Since antiparallel domain walls are symmetry allowed in all ferroelectrics, and since domain wall broadening on nanometer scale is widely reported in literature, this mechanism is generally applicable to all ferroelectrics.
Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical signals aroun
We investigate magnetic domain wall (MDW) dynamics induced by applied electric fields in ferromagnetic-ferroelectric thin-film heterostructures. In contrast to conventional driving mechanisms where MDW motion is induced directly by magnetic fields or
We investigated the aspect ratio (thickness/width) dependence of the threshold current density required for the current-driven domain wall (DW) motion for the Ni81Fe19 nanowires. It has been shown theoretically that the threshold current density is p
Modulating the polarization of a beam of quantum particles is a powerful method to tailor the macroscopic properties of the ensuing energy flux as it directly influences the way in which its quantum constituents interact with other particles, waves o
Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported values of coer