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Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of x-ray intensity oscillations due to a gradual surface roughening during growth is found. The corresponding sequence of coverages of the different terrace levels is obtained. The after-deposition surface recovery is very slow. Annealing at 310 degrees Celsius combined with the deposition of one monolayer of Fe3Si restores the surface to high perfection and minimal roughness. Our stoichiometric films possess long-range order and a high quality heteroepitaxial interface.
We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a powe
In epitaxially strained ferroelectric thin films and superlattices, the ferroelectric transition temperature can lie above the growth temperature. Ferroelectric polarization and domains should then evolve during the growth of a sample, and electrosta
Temperature dependent structural phase transitions of SrRuO3 thin films epitaxially grown on SrTiO3(001) single crystal substrates have been studied using high-resolution x-ray diffraction. In contrast to bulk SrRuO3, coherently strained epitaxial la
Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal struct
Cubic boron phosphide BP has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B0 = 174(2) GPa has been established, which is in excellent agreement with our ab initio ca