اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدBoron phosphide under pressure: in situ study by Raman scattering and X-ray diffraction
93
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Cubic boron phosphide BP has been studied in situ by X-ray diffraction and Raman scattering up to 55 GPa at 300 K in a diamond anvil cell. The bulk modulus of B0 = 174(2) GPa has been established, which is in excellent agreement with our ab initio calculations. The data on Raman shift as a function of pressure, combined with equation-of-state data, allowed us to estimate the Gruneisen parameters of the TO and LO modes of zinc-blende structure, {gamma}GTO = 1.16 and {gamma}GLO = 1.04, just like in the case of other AIIIBV diamond-like phases, for which {gamma}GTO > {gamma}GLO = 1. We also established that the pressure dependence of the effective electro-optical constant {alpha} is responsible for a strong change in relative intensities of the TO and LO modes from ITO/ILO ~0.25 at 0.1 MPa to ITO/ILO ~2.5 at 45 GPa, for which we also find excellent agreement between experiment and theory.
قيم البحث
اقرأ أيضاً
We report the evolution of charge density wave states under pressure for two NbS3 phases triclinic (phase I) and monoclinic (phase II) at room temperature. Raman and X-ray diffraction (XRD) techniques are applied. The x-ray studies on the monoclinic
phase under pressure show a compression of the lattice at different rates below and above 7 GPa but without a change in space group symmetry. The Raman spectra of the two phases evolve similarly with pressure; all peaks almost disappear in the 6-8 GPa range, indicating a transition from an insulating to a metallic state, and peaks at new positions appear above 8 GPa. The results suggest suppression of the ambient charge-density waves and their subsequent recovery with new orderings above 8 GPa.
High pressure Raman experiments on Boron Nitride multi-walled nanotubes show that the intensity of the vibrational mode at ~ 1367 cm-1 vanishes at ~ 12 GPa and it does not recover under decompression. In comparison, the high pressure Raman experiment
s on hexagonal Boron Nitride show a clear signature of a phase transition from hexagonal to wurtzite at ~ 13 GPa which is reversible on decompression. These results are contrasted with the pressure behavior of carbon nanotubes and graphite.
Room temperature angle-dispersive x-ray diffraction measurements on spinel ZnGa2O4 up to 56 GPa show evidence of two structural phase transformations. At 31.2 GPa, ZnGa2O4 undergoes a transition from the cubic spinel structure to a tetragonal spinel
structure similar to that of ZnMn2O4. At 55 GPa, a second transition to the orthorhombic marokite structure (CaMn2O4-type) takes place. The equation of state of cubic spinel ZnGa2O4 is determined: V0 = 580.1(9) A3, B0 = 233(8) GPa, B0= 8.3(4), and B0= -0.1145 GPa-1 (implied value); showing that ZnGa2O4 is one of the less compressible spinels studied to date. For the tetragonal structure an equation of state is also determined: V0 = 257.8(9) A3, B0 = 257(11) GPa, B0= 7.5(6), and B0= -0.0764 GPa-1 (implied value). The reported structural sequence coincides with that found in NiMn2O4 and MgMn2O4.
SrMoO4 was studied under compression up to 25 GPa by angle-dispersive x-ray diffraction. A phase transition was observed from the scheelite-structured ambient phase to a monoclinic fergusonite phase at 12.2(9) GPa with cell parameters a = 5.265(9) A,
b = 11.191(9) A, c = 5.195 (5) A, and beta = 90.9, Z = 4 at 13.1 GPa. There is no significant volume collapse at the phase transition. No additional phase transitions were observed and on release of pressure the initial phase is recovered, implying that the observed structural modifications are reversible. The reported transition appeared to be a ferroelastic second-order transformation producing a structure that is a monoclinic distortion of the low-pressure phase and was previously observed in compounds isostructural to SrMoO4. A possible mechanism for the transition is proposed and its character is discussed in terms of the present data and the Landau theory. Finally, the EOS is reported and the anisotropic compressibility of the studied crystal is discussed in terms of the compression of the Sr-O and Mo-O bonds.
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of x-ray inte
nsity oscillations due to a gradual surface roughening during growth is found. The corresponding sequence of coverages of the different terrace levels is obtained. The after-deposition surface recovery is very slow. Annealing at 310 degrees Celsius combined with the deposition of one monolayer of Fe3Si restores the surface to high perfection and minimal roughness. Our stoichiometric films possess long-range order and a high quality heteroepitaxial interface.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
