The magnetic and magnetotransport properties of single crystalline La1-x-yPryCaxMnO3 (x=0.42, y=0.40) thin films (~140 nm) deposited on (110) oriented LaAlO3 and SrTiO3 substrates exhibit a crossover from the high temperature antiferromagnetic-charge
ordered insulator (AFM-COI) phase (T>TN) to strain glass (T<Tg). At intermediate temperatures (Tg<T<TN) dynamical liquid having prominent thermal-magneto-resistive hysteresis dominates in the cooling cycle, while in the warming cycle it is preceded by ferromagnetic metal (FMM) phase. Magnetic field required to drive AFM-COI to FMM phase transition are higher than that for the strain glass. The magneto-electric nature and temperature span of the distinct magnetic regimes are sensitive to the thermal cycling and substrate induced strain.
We study the impact of hydrostatic pressure on superconductivity of new BiS2 based layered REO0.5F0.5BiS2 (RE-La, Pr, and Nd) compounds through the measurements of dc electrical resistivity. The REO0.5F0.5BiS2 (RE-La, Pr and Nd) compounds synthesized
by solid state reaction route via vacuum encapsulation are crystallized in the tetragonal P4/nmm space group. At ambient pressure the superconducting transition onset temperatures are 2.7K, 3.5K and 4.5K which are enhanced substantially under external hydrostatic pressure to 10.5K, 7.8K and 7.5K for LaO0.5F0.5BiS2, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 respectively at 1.68GPa. The normal state electrical resistivity decreases with applied pressure for REO0.5F0.5BiS2 (RE-La, Pr and Nd). The electrical resistivity under magnetic field and applied pressure has been measured to estimate upper critical field, the values of which are 15.9Tesla, 8.8Tesla and 8.2Tesla for LaO0.5F0.5BiS2, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 compounds. Substantial enhancement of superconductivity under moderate pressures in studied new BiS2 based superconductors call for the attention of condensed matter physics community.
We report the synthesis and physical property characterization of PrFe1-xCoxAsO with x = 0.0 to 1.0. The studied samples are synthesized by solid state reaction route via vacuum encapsulation method. The pristine compound PrFeAsO does not show superc
onductivity, but rather exhibits a metallic step like transition due to spin density wave ordering of Fe moments below 150 K, followed by another upward step due to anomalous ordering of Pr moments at 12 K. Both the Fe-SDW and Pr-TN temperatures decrease monotonically with Co substitution at Fe site. Superconductivity appears in a narrow range of x from 0.07 to 0.25 with maximum Tc at 11.12 K for x = 0.15. Samples, with x = 0.25 exhibit metallic behavior right from 300 K down to 2 K, without any Fe-SDW or Pr-TN steps in resistivity. In fact, though Fe-SDW decreases monotonically, the Pr-TN is disappeared even with x = 0.02. The magneto transport measurements below 14 Tesla on superconducting polycrystalline Co doped PrFeAsO lead to extrapolated values of the upper critical fields [Hc2(0)] of up to 60 Tesla.
A reasonable cause of absence of hump structure in thermal conductivity of MgB2 below the superconducting transition temperature (Tc) lies in the appearance of multigap structure. The gaps of lower magnitude can be suppressed by defects so that this
system becomes effectively a single gap superconductor. When such a situation is created, it is hoped that thermal conductivity will show hump below Tc. Proceeding along these lines, a sample of MgB2 with a relatively higher residual resistivity (33.3 mili-Ohm-cm)has been found to show a hump structure below Tc. The actual electronic thermal conductivity kel of this sample is less than that expected from the Wiedeman- Franz law by more than a factor of 2.6 in the considered temperature range. Modifying the Wiedeman- Franz law for the electronic contribution by replacing the Lorenz number by an effective Lorenz number Leff (L0) we have obtained two sets of kel, namely those with Leff = 0.1L0 and 0.2L0. Corresponding to these two sets of kel, two sets of the phonon thermal conductivity kph are obtained. kph has been analyzed in terms of an extended Bardeen- Rickayzen- Tewordt theory. The main result of this analysis is that the hump structure corresponds to a gap ratio of 3.5, and that large electron-point defect scattering is the main source of drastic reduction of the electronic thermal conductivity from that given by the usual Wiedeman- Franz law.
We report the effect of adipic acid (C6H10O4) doping on lattice parameters, microstructure, critical temperature (Tc), current density (Jc), and irreversibility field (Hirr) for MgB2 superconductor. Actual carbon (C) substitution level for boron (B)
is estimated to be from 0.40 percent to 2.95 percent for different doping levels. A reduction in Tc from 38.43 to 34.93 K and in lattice parameter a from 3.084(3) A to 3.075(6) Ais observed for the10 wt percent C6H10O4 doped sample in comparison to pristine MgB2. This is an indication of C substitution at boron sites, with the C coming from the decomposition of C6H10O4 at the time of reaction. Interestingly the doped samples have resulted in significant enhancement of Jc and Hirr. All the doped samples exhibit the Jc value of the order of 10^4 A/cm2 at 5 K and 8 T, which is higher by an order of magnitude as compared to undoped sample. This result indicates that C6H10O4 is a promising material for MgB2 for obtaining the excellent Jc values under higher magnetic fields.
The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C subst
itution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x = 0.1 sample . In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.
Thermoelectric power, S(T) of the Mg1-xAlxB2 system has been measured for x = 0.0, 0.1, 0.2, 0.4, 0.6, 0.8 and 1.0. XRD, resistivity and magnetization measurements are also presented. It has been found that the thermoelectric power is positive for x
= 0.4 and is negative for x = 0.6 over the entire temperature range studied up to 300 K. The thermoelectric power of x = 0.4 samples vanishes discontinuously below a certain temperature, implying existence of superconductivity. In general, the magnitude of the thermoelectric power increases with temperature up to a certain temperature, and then it starts to decrease towards zero base line. In order to explain the observed behavior of the thermoelectric power, we have used a model in which both diffusion and phonon drag processes are combined by using a phenomenological interpolation between the low and high temperature behaviors of the thermoelectric power. The considered model provides an excellent fit to the observed data. It is further found that Al doping enhances the Debye temperature.
The physical property characterization of Al doped Mg1-xAlxB2 system with x = 0.0 to 0.50 is reported. The results related to phase formation, structural transition, resistivity R(T) and magnetization M(T) measurements are discussed in detail. It is
shown that the addition of electrons to MgB2 through Al results in loss of superconductivity. Also seen is a structural transition associated with the collapse of boron layers reflected by the continuous decrease in the c parameter. The main emphasis in this paper is on slow scan X-ray diffraction (XRD) results, which confirm the existence of a superstructure along the c-direction for the x = 0.50 sample. The appearance of some additional peaks, viz. [103], [004], [104] and [112], results in doubling of the lattice parameter along the c-axis. This possibly indicates the alternative ordering of Al and Mg in MgAlB4 separated by hexagonal boron layers but still maintaining the same hexagonal AlB2 type structure.
We report synthesis, structure, electrical transport and heat capacity of SmFeAsO. The title compound is synthesized by one-step encapsulation of stoichiometric FeAs, Sm, and Sm2O3 in an evacuated (10-5 Torr) quartz tube by prolong (72 hours) anneali
ng at 1100oC. The as synthesized compound is crystallized in tetragonal structure with P4/nmm space group having lattice parameters a = 3.93726(33) A and c = 8.49802(07) A. The resistance (R-T) measurements on the compound exhibited ground state spin-density-wave (SDW)-like metallic steps below 140 K. Heat capacity CP(T) measurements on the title compound, showed an anomaly at around 140 K, which is reminiscent of the SDW ordering of the compound. At lower temperatures the CP(T) shows a clear peak at around 4.5 K. At lower temperature below 20 K, Cp(T) is also measured under an applied field of 7 Tesla. It is concluded that the CP(T) peak at 4.5 K is due to the anti-ferromagnetic(AFM) ordering of Sm3+ spins. These results are in confirmation with ordering of Sm in Sm2-xCexCuO4.
The bulk polycrystalline sample FeSe1/2Te1/2 is synthesized by solid state reaction route in an evacuated sealed quartz tube at 750 oC. The presence of superconductivity is confirmed through magnetization/thermoelectric/resistivity studies. It is fou
nd that the superconducting transition temperature (Tc) is around 12 K. Heat capacity (Cp) of superconducting FeSe1-xTex exhibited a hump near Tc, instead of well defined Lambda transition. X-ray Photo electron spectroscopy (XPS) studies revealed well defined positions for divalent Fe, Se and Te but with sufficient hybridization of Fe (2p) and Se/Te (3d) core levels. In particular divalent Fe is shifted to higher BE (binding energy) and Se and Te to lower. The situation is similar to that as observed earlier for famous Cu based HTSc (High Tc superconductors), where Cu (3d) orbital hybridizes with O (2p). We also found the satellite peak of Fe at 712.00 eV, which is attributed to charge carrier localization induced by Fe at 2c site.
