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تسجيل مستخدم جديدRole of Carbon in Enhancing the Performance of MgB2 superconductor
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The enhancement of the critical current density (Jc(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (Hc2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal Jc(H) values are obtained for x = 0.1 sample . In case of nano-SiC doped in MgB2, the Jc(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres.
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We report the synthesis and variation of superconductivity parameters such as transition temperature Tc, upper critical field Hc, critical current density Jc, irreversibility field Hirr and flux pinning parameter (Fp) for the MgB2-xCx system with nan
o-Carbon doping up to x=0.20. Carbon substitutes successfully on boron site and results in significant enhancement of Hirr and Jc(H). Resistivity measurements reveal a continuous decrease in Tc under zero applied field, while the same improves remarkably at higher fields with an increase in nano-C content for MgB2-xCx system. The irreversibility field value (Hirr) is 7.6 & 6.6 Tesla at 5 and 10K respectively for the pristine sample, which is enhanced to 13.4 and 11.0 Tesla for x = .08 sample at same temperatures. Compared to undoped sample, critical current density (Jc) for the x=0.08 nano-Carbon doped sample is increased by a factor of 24 at 10K at 6 Tesla field.
We report synthesis, structure/micro-structure, resistivity under magnetic field [R(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity K(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB2,
processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3-4nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB2. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm-1. Superconductivity is observed at 37.2K by magnetic susceptibility C(T), resistivity R(T), thermoelectric power S(T), and thermal conductivity K(T) measurements. The power law fitting of R(T) give rise to Debye temperature at 1400K which is found consistent with the theoretical fitting of S(T), exhibiting ThetaD of 1410K and carrier density of 3.81x 1028/m3. Thermal conductivity K(T) shows a jump at 38K, i.e., at Tc, which was missing in some earlier reports. Critical current density (Jc) of up to 105 A/cm2 in 1-2T (Tesla) fields at temperatures (T) of up to 10K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20K respectively. The superconducting performance parameters viz. irreversibility field (Hirr) and critical current density Jc(H) of the studied MgB2 are improved profoundly with addition of nano-SiC and nano-Diamond. The physical property parameters measured for polycrystalline MgB2 are compared with earlier reports and a consolidated insight of various physical properties is presented.
A reasonable cause of absence of hump structure in thermal conductivity of MgB2 below the superconducting transition temperature (Tc) lies in the appearance of multigap structure. The gaps of lower magnitude can be suppressed by defects so that this
system becomes effectively a single gap superconductor. When such a situation is created, it is hoped that thermal conductivity will show hump below Tc. Proceeding along these lines, a sample of MgB2 with a relatively higher residual resistivity (33.3 mili-Ohm-cm)has been found to show a hump structure below Tc. The actual electronic thermal conductivity kel of this sample is less than that expected from the Wiedeman- Franz law by more than a factor of 2.6 in the considered temperature range. Modifying the Wiedeman- Franz law for the electronic contribution by replacing the Lorenz number by an effective Lorenz number Leff (L0) we have obtained two sets of kel, namely those with Leff = 0.1L0 and 0.2L0. Corresponding to these two sets of kel, two sets of the phonon thermal conductivity kph are obtained. kph has been analyzed in terms of an extended Bardeen- Rickayzen- Tewordt theory. The main result of this analysis is that the hump structure corresponds to a gap ratio of 3.5, and that large electron-point defect scattering is the main source of drastic reduction of the electronic thermal conductivity from that given by the usual Wiedeman- Franz law.
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Polycrystalline MgB2-nDx (x= 0 to 0.1) samples are synthesized by solid-state route with ingredients of Mg, B and n-Diamond. The results from magneto-transport and magnetization of nano-diamond doped MgB2-nDx are reported. Superconducting transition
temperature (Tc) is not affected significantly by x up to x = 0.05 and latter decreases slightly for higher x > 0.05. R(T) vs H measurements show higher Tc values under same applied magnetic fields for the nano-diamond added samples, resulting in higher estimated Hc2 values. From the magnetization measurements it was found that irreversibility field value Hirr for the pristine sample is 7.5 Tesla at 4 K and the same is increased to 13.5 Tesla for 3-wt% nD added sample at the same temperature. The Jc(H) plots at all temperatures show that Jc value is lowest at all applied fields for pristine MgB2 and the sample doped with 3-wt% nD gives the best Jc values at all fields. For the pure sample the value of Jc is of the order of 105 A/cm2 at lower fields but it decreases very fast as the magnetic field is applied and becomes negligible above 7 Tesla. The Jc is 40 times higher than pure MgB2 at 10 K at 6 Tesla field in case of 3%nD doped sample and its value is still of the order of 103 A/cm2 at 10 Tesla for the same sample. On the other hand at 20K the 5%nD sample shows the best performance at higher fields. These results are discussed in terms of extrinsic pinning due to dispersed n-Diamond in the host MgB2 matrix along with the intrinsic pinning due to possible substitution of C at Boron site and increased inter-band scattering for highly doped samples resulting in extraordinary performance of the doped system.
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