Exciton splitting in semiconducting carbon nanotubes in ultrahigh magnetic fields above 300 T

In high magnetic fields, the exciton absorption spectrum of a semiconducting single-walled carbon nanotube splits as a result of Aharonov-Bohm magnetic flux. A magnetic field of 370 T, generated by the electro-magnetic flux compression destructive pulsed magnet-coil technique, was applied to single-chirality semiconducting carbon nanotubes. Using streak spectroscopy, we demonstrated the separation of the independent band-edge exciton states at the K and K points of the Brillouin zone after the mixing of the dark and bright states above 150 T. These results enable a quantitative discussion of the whole picture of the Aharonov-Bohm effect in single-walled carbon nanotubes.

Mott metal-insulator transition induced by utilizing a glass-like structural ordering in low-dimensional molecular conductors

We utilize a glass-like structural transition in order to induce a Mott metal-insulator transition in the quasi-two-dimensional organic charge-transfer salt $kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br. In this material, the terminal ethylene groups of the BEDT-TTF molecules can adopt two different structural orientations within the crystal structure, namely eclipsed (E) and staggered (S) with the relative orientation of the outer C$-$C bonds being parallel and canted, respectively. These two conformations are thermally disordered at room temperature and undergo a glass-like ordering transition at $T_g sim 75,$K. When cooling through $T_g$, a small fraction that depends on the cooling rate remains frozen in the S configuration, which is of slightly higher energy, corresponding to a controllable degree of structural disorder. We demonstrate that, when thermally coupled to a low-temperature heat bath, a pulsed heating current through the sample causes a very fast relaxation with cooling rates at $T_g$ of the order of several 1000$,$K/min. The freezing of the structural degrees of freedom causes a decrease of the electronic bandwidth $W$ with increasing cooling rate, and hence a Mott metal-insulator transition as the system crosses the critical ratio $(W/U)_{c}$ of bandwidth to on-site Coulomb repulsion $U$. Due to the glassy character of the transition, the effect is persistent below $T_g$ and can be reversibly repeated by melting the frozen configuration upon warming above $T_g$. Both by exploiting the characteristics of slowly-changing relaxation times close to this temperature and by controlling the heating power, the materials can be fine-tuned across the Mott transition. A simple model allows for an estimate of the energy difference between the E and S state as well as the accompanying degree of frozen disorder in the population of the two orientations.

High-energy spin and charge excitations in electron-doped copper oxide superconductors

The evolution of electronic (spin and charge) excitations upon carrier doping is an extremely important issue in superconducting layered cuprates and the knowledge of its asymmetry between electron- and hole-dopings is still fragmentary. Here we combine x-ray and neutron inelastic scattering measurements to track the doping dependence of both spin and charge excitations in electron-doped materials. Copper L3 resonant inelastic x-ray scattering spectra show that magnetic excitations shift to higher energy upon doping. Their dispersion becomes steeper near the magnetic zone center and deeply mix with charge excitations, indicating that electrons acquire a highly itinerant character in the doped metallic state. Moreover, above the magnetic excitations, an additional dispersing feature is observed near the {Gamma}-point, and we ascribe it to particle-hole charge excitations. These properties are in stark contrast with the more localized spin-excitations (paramagnons) recently observed in hole-doped compounds even at high doping-levels.

Electron localization near Mott transition in organic superconductor $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}]$Br

The effect of disorder on the electronic properties near the Mott transition is studied in an organic superconductor $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br, which is systematically irradiated by X-ray. We observe that X-ray irradiation causes Anderson-type electron localization due to molecular disorder. The resistivity at low temperatures demonstrates variable range hopping conduction with Coulomb interaction. The experimental results show clearly that the electron localization by disorder is enhanced by the Coulomb interaction near the Mott transition.

Optical probe of carrier doping by X-ray irradiation in organic dimer Mott insulator $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}]$Cl

We investigated the infrared optical spectra of an organic dimer Mott insulator $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, which was irradiated with X-rays. We observed that the irradiation caused a large spectral weight transfer from the mid-infrared region, where interband transitions in the dimer and Mott-Hubbard bands take place, to a Drude part in a low-energy region; this caused the Mott gap to collapse. The increase of the Drude part indicates a carrier doping into the Mott insulator due to irradiation defects. The strong redistribution of the spectral weight demonstrates that the organic Mott insulator is very close to the phase border of the bandwidth-controlled Mott transition.

Mott transition and superconductivity in the strongly correlated organic superconductor $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}]$Br

The magnetic field effect on the phase diagram of the organic Mott system $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br in which the bandwidth was tuned by the substitution of deuterated molecules was studied by means of the resistivity measurements performed in magnetic fields. The lower critical point of the first-order Mott transition, which ended on the upper critical field $H_{rm c2}$-temperature plane of the superconductivity, was determined experimentally in addition to the previously observed upper critical end point. The lower critical end point moved to a lower temperature with the suppression of $T_{rm c}$ in magnetic fields and the Mott transition recognized so far as the $S$-shaped curve reached $T =$ 0 when $H > H_{rm c2}$ in the end.

X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators

We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators $kappa$-(ET)$_{2}$$X$ with $X =$ Cu[N(CN)$_{2}$]Cl and Cu$_{2}$(CN)$_{3}$. For $kappa$-(ET)$_{2}$Cu[N(CN)$_{2}$]Cl, we have observed a large decrease of the resistivity by 40 % with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.