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It has been shown recently [J. L. Lado et al., Phys. Rev. Lett. 113, 027203 (2014)] that edge magnetic moments in graphene-like nanoribbons are strongly influenced by the intrinsic spin-orbit interaction. Due to this interaction an anisotropy comes a bout which makes the in-plane arrangement of magnetic moments energetically more favorable than that corresponding to the out-of-plane configuration. In this paper we raise both the edge magnetism problem as well as differential conductance and shot noise Fano factor issues, in the context of finite-size flakes within the Coulomb blockade (CB) transport regime. Our findings elucidate the following problems: (i) modification of the CB diamonds by the appearance of the in-plane magnetic moments, (ii) modification of the CB diamonds by intrinsic spin-orbit interaction.
212 - S. Krompiewski 2014
It is shown that apart from well-known factors, like temperature, substrate, and edge reconstruction effects, also the presence of external contacts is destructive for the formation of magnetic moments at the edges of graphene nanoribbons. The edge m agnetism gradually decreases when graphene/electrode interfaces become more and more transparent for electrons. In addition to the graphene/electrode coupling strength, also the aspect ratio parameter, i.e. a width/length ratio of the graphene nanoribbon, is crucial for the suppression of edge magnetism. The present theory uses a tight-binding method, based on the mean-field Hubbard Hamiltonian for $pi$ electrons, and the Greens function technique within the Landauer-Buttiker approach.
67 - S. Krompiewski 2012
Carbon-based nanostructures and graphene, in particular, evoke a lot of interest as new promising materials for nanoelectronics and spintronics. One of the most important issue in this context is the impact of external electrodes on electronic proper ties of graphene nanoribbons (GNR). The present theoretical method is based on the tight-binding model and a modified recursive procedure for Greens functions. The results show that within the ballistic transport regime, the so called end-contacted geometry (of minimal GNR/electrode interface area), is usually more advantageous for practical applications than its side-contacted counterpart (with a larger coverage area), as far as the electrical conductivity is concerned. As regards the giant magnetoresistance coefficient, however, the situation is exactly opposite, since spin- splitting effects are more pronounced in the lower conductive side-contacted setups.
201 - S. Krompiewski 2009
Based on a tight-binding model and a recursive Greens function technique, spin-depentent ballistic transport through tinny graphene sheets (flakes) is studied. The main interest is focussed on: electrical conductivity, giant magnetoresistance (GMR) a nd shot noise. It is shown that when graphene flakes are sandwiched between two ferromagnetic electrodes, the resulting GMR coefficient may be quite significant. This statement holds true both for zigzag and armchair chiralities, as well as for different aspect (width/length) ratios. Remarkably, in absolute values the GMR of the armchair-edge graphene flakes is systematically greater than that corresponding to the zigzag-edge graphene flakes. This finding is attributed to the different degree of conduction channel mixing for the two chiralities in question. It is also shown that for big aspect ratio flakes, 3-dimensional end-contacted leads, very much like invasive contacts, result in non-universal behavior of both conductivity and Fano factor.
219 - S. Krompiewski 2008
This contribution reports on comparative studies on giant magnetoresistance (GMR) in carbon nanotubes (CNTs) and graphene nanoribbons of similar aspect ratios (i.e perimeter/length and width/length ratios, for the former and the latter, respectively) . The problem is solved at zero temperature in the ballistic transport regime, by means of the Greens functions technique within the tight-binding model and with the so-called wide band approximation for electrodes. The GMR effect in graphene is comparable to that of CNTs, it depends strongly on the chirality and only slightly on the aspect ratio. It turns out that graphene, analogously to CNTs may be quite an interesting material for spintronic applications.
Using the real-time diagrammatic technique and taking into account both the sequential and cotunneling processes, we analyze the transport properties of single-wall metallic carbon nanotubes coupled to nonmagnetic and ferromagnetic leads in the full range of parameters. In particular, considering the two different shell filling schemes of the nanotubes, we discuss the behavior of the differential conductance, tunnel magnetoresistance and the shot noise. We show that in the Coulomb diamonds corresponding to even occupations, the shot noise becomes super-Poissonian due to bunching of fast tunneling processes resulting from the dynamical channel blockade, whereas in the other diamonds the noise is roughly Poissonian, in agreement with recent experiments. The tunnel magnetoresistance is very sensitive to the number of electrons in the nanotube and exhibits a distinctively different behavior depending on the shell filling sequence of the nanotube.
We present theoretical study of shot noise in single wall metallic carbon nanotubes weakly coupled to either nonmagnetic or ferromagnetic leads. Using the real-time diagrammatic technique, we calculate the current, Fano factor and tunnel magnetoresis tance in the sequential tunneling regime. It is shown that the differential conductance displays characteristic four-fold periodicity, indicating single-electron charging. Such a periodicity is also visible in tunnel magnetoresistance of the system as well as in the Fano factor. The present studies elucidate the impact of ferromagnetic (vs. nonmagnetic) contacts on the transport characteristics under consideration.
69 - S. Krompiewski 2007
In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and thermal) noise. The method is based on the tight-binding model and the non- equilibrium Greens function technique. The calculations show that, at room temperature, the shot noise of the CNT FET is Poissonian in the sub-threshold region, whereas in elevated gate and drain/source voltage regions the Fano factor gets strongly reduced. Moreover, transport properties strongly depend on relative magnetization orientations in the source and drain contacts. In particular, one observes quite a large tunnel magnetoresistance, whose absolute value may exceed 50%.
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