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In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and thermal) noise. The method is based on the tight-binding model and the non- equilibrium Greens function technique. The calculations show that, at room temperature, the shot noise of the CNT FET is Poissonian in the sub-threshold region, whereas in elevated gate and drain/source voltage regions the Fano factor gets strongly reduced. Moreover, transport properties strongly depend on relative magnetization orientations in the source and drain contacts. In particular, one observes quite a large tunnel magnetoresistance, whose absolute value may exceed 50%.
The observed performances of carbon nanotube field effect transistors are examined using first-principles quantum transport calculations. We focus on the nature and role of the electrical contact of Au and Pd electrodes to open-ended semiconducting n
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic pr
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Sch
Integrating negative capacitance (NC) into the field-effect transistors promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realization of the stable static negative capacitance in the non-transient regime w