A new method for the determination of the Alfven wave energy generated during magnetic reconnection is introduced and used to analyze the results from two-dimensional MHD simulations. It is found that the regions with strong Alfven wave perturbations
almost coincide with that where both magnetic-field lines and flow-stream lines are bent, suggesting that this method is reliable for identifying Alfven waves. The magnetic energy during magnetic reconnection is mainly transformed into the thermal energy. The conversion rate to Alfven wave energy from the magnetic energy is strongly correlated to the magnetic reconnection rate. The maximum conversion rate at the time with the peak reconnection rate is found to be only about 4% for the cases with the plasma beta=0.01,0.1, and 1.0.
We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer inte
raction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H-TaS2 devices was observed in our experiment at low temperature. The temperature dependence of the relative threshold voltage can be scaled to (1- T / Tr )^0.5+delta with delta=0.08 for the different measured devices with presence of the CDWs. The conductance-voltage and capacity-voltage measurements were performed simultaneously. At very low ac active voltage, we found that the hysteresis loops of these two measurements exactly match each other. Our results point out that the capacity-voltage measurements can also be used to define the threshold depinning voltage of the CDW, which give us a new method to investigate the CDWs.
Polycrystalline sample of the new layered superconductor Bi4O4S3 is successfully synthesized by solid-state reaction method by using Bi, S and Bi2O3 powders with one step reaction. The superconducting transition temperature (Tconset=4.5 K), the zero
resistance transition temperature (Tc0=4.07 K) and the diamagnetic transition temperature (4.02 K at H=10 Oe) were confirmed by electrical transport and magnetic measurements. Also, our results indicate a typical type II-superconductor behavior. In addition, a large thermoelectric effect was observed with a dimensionless thermoelectric figure of merit (ZT) of about 0.03 at 300K, indicating Bi4O4S3 can be a potential thermoelectric material.
We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0leq x leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-doping, accompanied by the disappearance of pseudogap/M
ott-gap as shown by the density functional theory (DFT) calculations. The superconducting state develops at low temperatures within the CDW state for the samples with the moderate doping levels. The superconductivity strongly depends on $x$ within a narrow range, and the maximum superconducting transition temperature is 2.8 K as $x=0.02$. We propose that the induced superconductivity and CDW phases are separated in real space. For high doping level ($x>0.04$), the Anderson localization (AL) state appears, resulting in a large increase of resistivity. We present a complete electronic phase diagram of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ system that shows a dome-like $T_{c}(x)$.
The detailed optical properties of BaFe2As2 have been determined over a wide frequency range above and below the structural and magnetic transition at T_N = 138 K. A prominent in-plane infrared-active mode is observed at 253 cm^{-1} (31.4 meV) at 295
K. The frequency of this vibration shifts discontinuously at T_N; for T < T_N the frequency of this mode displays almost no temperature dependence, yet it nearly doubles in intensity. This anomalous behavior appears to be a consequence of orbital ordering in the Fe-As layers.
A series of 122 phase BaFe$_{2-x}$Ni$_x$As$_2$ ($x$ = 0, 0.055, 0.096, 0.18, 0.23) single crystals were grown by self flux method and a dome-like Ni doping dependence of superconducting transition temperature is discovered. The transition temperature
$T_c^{on}$ reaches a maximum of 20.5 K at $x$ = 0.096, and it drops to below 4 K as $x$ $geq$ 0.23. The negative thermopower in the normal state indicates that electron-like charge carrier indeed dominates in this system. This Ni-doped system provides another example of superconductivity induced by electron doping in the 122 phase.
