Emission line galaxies (ELGs), more generally star-forming galaxies, are valuable tracers of large-scale structure and therefore main targets of upcoming wide-area spectroscopic galaxy surveys. We propose a fixed-aperture shape estimator of each ELG
for extracting the intrinsic alignment (IA) signal, and assess the performance of the method using image simulations of ELGs generated from the IllustrisTNG simulation including observational effects such as the sky background noise. We show that our method enables a significant detection of the IA power spectrum with the linear-scale coefficient $A_{rm IA}simeq (13$--$15)pm 3.0$ up to $z=2$, even from the small simulation volume $sim0.009,(h^{-1}{rm Gpc})^3$, in contrast to the null detection with the standard method. Thus the ELG IA signal, measured with our method, opens up opportunities to exploit cosmology and galaxy physics in high-redshift universe.
Using photometric galaxies from the HSC survey, we measure the stellar mass density profiles for satellite galaxies as a function of the projected distance, $r_p$, to isolated central galaxies (ICGs) selected from SDSS/DR7 spectroscopic galaxies at $
zsim0.1$. By stacking HSC images, we also measure the projected stellar mass density profiles for ICGs and their stellar halos. The total mass distributions are further measured from HSC weak lensing signals. ICGs dominate within $sim$0.15 times the halo virial radius ($0.15R_{200}$). The stellar mass versus total mass fractions drop with the increase in $r_p$ up to $sim0.15R_{200}$, beyond which they are less than 1% while stay almost constant, indicating the radial distribution of satellites trace dark matter. The total stellar mass in satellites is proportional to the virial mass of the host halo, $M_{200}$, for ICGs more massive than $10^{10.5}M_odot$, i.e., $M_{ast,mathrm{sat}} propto M_{200}$, whereas the relation between the stellar mass of ICGs $+$ stellar halos and $M_{200}$ is close to $M_{ast,mathrm{ICG+diffuse}}propto M_{200}^{1/2}$. Below $10^{10.5}M_odot$, the change in $M_{200}$ is much slower with the decrease in $M_{ast,mathrm{ICG+diffuse}}$. At fixed stellar mass, red ICGs are hosted by more massive dark matter halos and have more satellites. At $M_{200}sim10^{12.7}M_odot$, both $M_{ast,mathrm{sat}}$ and the fraction of stellar mass in satellites versus total stellar mass, $f_mathrm{sat}$, tend to be slightly higher around blue ICGs, perhaps implying the late formation of blue galaxies. $f_mathrm{sat}$ increases with the increase in both $M_{ast,mathrm{ICG+diffuse}}$ and $M_{200}$, and scales more linearly with $M_{200}$. We provide best-fitting formulas for these scaling relations and for red and blue ICGs separately.
The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive thermal con
duction fail, resulting in significant reduction in the effective thermal conductivity. This work reports, for the first time, the temperature dependent thermal conductivity of doped epitaxial 6H-SiC and monocrystalline porous 6H-SiC below room temperature probed by time-domain thermoreflectance. Strong quasi-ballistic thermal transport was observed in these samples, especially at low temperatures. Doping and structural boundaries were applied to tune the quasi-ballistic thermal transport since dopants selectively scatter high-frequency phonons while boundaries scatter phonons with long mean free paths. Exceptionally strong phonon scattering by boron dopants are observed, compared to nitrogen dopants. Furthermore, orders of magnitude reduction in the measured thermal conductivity was observed at low temperatures for the porous 6H-SiC compared to the epitaxial 6H-SiC. Finally, first principles calculations and a simple Callaway model are built to understand the measured thermal conductivities. Our work sheds light on the fundamental understanding of thermal conduction in technologically-important wide bandgap semiconductors such as 6H-SiC and will impact applications such as thermal management of 6H-SiC-related electronics and devices.
In this work, we introduce metric learning (ML) to enhance the deep embedding learning for text-independent speaker verification (SV). Specifically, the deep speaker embedding network is trained with conventional cross entropy loss and auxiliary pair
-based ML loss function. For the auxiliary ML task, training samples of a mini-batch are first arranged into pairs, then positive and negative pairs are selected and weighted through their own and relative similarities, and finally the auxiliary ML loss is calculated by the similarity of the selected pairs. To evaluate the proposed method, we conduct experiments on the Speaker in the Wild (SITW) dataset. The results demonstrate the effectiveness of the proposed method.
We present the 3-{it dimensional} intrinsic alignment power spectra between the projected 2d galaxy shape/spin and the 3d tidal field across $0.1<k/h{rm Mpc}^{-1}<60$ using cosmological hydrodynamical simulation, Illustris-TNG300, at redshifts rangin
g from $0.3$ to $2$. The shape-tidal field alignment increases with galaxy mass and the linear alignment coefficient $A_{rm IA}$, defined with respect to the primordial tidal field, is found to have weak redshift dependence. We also show a promising detection of the shape/spin-tidal field alignments for stellar mass limited samples and a weak or almost null signal for star-forming galaxies for the TNG300 volume, $sim 0.01~(h^{-1}{rm Gpc})^3$. We further study the morphology and environmental dependence of the intrinsic alignment power spectra. The shape of massive disk- and spheroid-galaxies tend to align with the tidal field. The spin of low mass disks (and spheroids at low redshifts) tend to be parallel with the tidal field, while the spin of massive spheroids and disks tend to be perpendicular to tidal field. The shape and spin of massive centrals align with the tidal field at both small and large scales. Satellites show a radial alignment within the one-halo term region, and low mass satellites have an intriguing alignment signal in the two-halo term region. We also forecast a feasibility to measure the intrinsic alignment power spectrum for spectroscopic and imaging surveys such as Subaru HSC/PFS and DESI. Our results thus suggest that galaxy intrinsic alignment can be used as a promising tool for constraining the galaxy formation models.
Satellites constitute an important fraction of the overall galaxy population and are believed to form in dark matter subhalos. Here we use the cosmological hydrodynamic simulation TNG100 to investigate how the formation histories of subhalos affect t
he properties and evolution of their host galaxies. We use a scaled formation time ($a_{rm nf}$) to characterize the mass assembly histories of the subhalos before they are accreted by massive host halos. We find that satellite galaxies in young subhalos (low $a_{rm nf}$) are less massive and more gas rich, and have stronger star formation and a higher fraction of ex situ stellar mass than satellites in old subhalos (high $a_{rm nf}$). Furthermore, these low $a_{rm nf}$ satellites require longer timescales to be quenched as a population than the high $a_{rm nf}$ counterparts. We find very different merger histories between satellites in fast accretion (FA, $a_{rm nf}<1.3$) and slow accretion (SA, $a_{rm nf}>1.3$) subhalos. For FA satellites, the galaxy merger frequency dramatically increases just after accretion, which enhances the star formation at accretion. While, for SA satellites, the mergers occur smoothly and continuously across the accretion time. Moreover, mergers with FA satellites happen mainly after accretion, while a contrary trend is found for SA satellites. Our results provide insight into the evolution and star formation quenching of the satellite population.
The non-equilibrium Greens function (NEGF) method with Buttiker probe scattering self-energies is assessed by comparing its predictions for the thermal boundary resistance with molecular dynamics (MD) simulations. For simplicity, the interface of Si/
heavy-Si is considered, where heavy-Si differs from Si only in the mass value. With Buttiker probe scattering parameters tuned against MD in homogeneous Si, the NEGF-predicted thermal boundary resistance quantitatively agrees with MD for wide mass ratios. Artificial resistances that the unaltered Landauer approach yield at virtual interfaces in homogeneous systems are absent in the present NEGF approach. Spectral information result from NEGF in its natural representation without further transformations. The spectral results show that the scattering between different phonon modes plays a crucial role in thermal transport across interfaces. Buttiker probes provide an efficient and reliable way to include anharmonicity in phonon related NEGF. NEGF including the Buttiker probes can reliably predict phonon transport across interfaces and at finite temperatures.
GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and
reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging.
Thermal boundary conductance (TBC) is critical in many thermal and energy applications. A decades-old puzzle has been that many of the measured TBCs, such as those well characterized across Al/Si and ZnO/GaN interfaces, significantly exceed theoretic
al results or even the absolute upper limit called the ``radiation limit, suggesting the failure of the theory. Here, we identify that for high-transmission interfaces, the commonly assumed phonon local thermal equilibrium adjacent to the interface fails, and the measurable phonon temperatures are not their emission temperature. We hence develop a ``nonequilibrium Landauer approach and define the unique ``dressed and ``intrinsic TBCs. Combining our approach even with a simple diffuse mismatch model (DMM) nearly doubles the theoretical TBCs across the Al/Si and ZnO/GaN interfaces, and the theoretical results agree with experiments for the first time. The radiation limit is also redefined and found to increase over 100% over the original radiation limit, and it can now well bound all the experimental data.
We use a 200 $h^{-1}Mpc$ a side N-body simulation to study the mass accretion history (MAH) of dark matter halos to be accreted by larger halos, which we call infall halos. We define a quantity $a_{rm nf}equiv (1+z_{rm f})/(1+z_{rm peak})$ to charact
erize the MAH of infall halos, where $z_{rm peak}$ and $z_{rm f}$ are the accretion and formation redshifts, respectively. We find that, at given $z_{rm peak}$, their MAH is bimodal. Infall halos are dominated by a young population at high redshift and by an old population at low redshift. For the young population, the $a_{rm nf}$ distribution is narrow and peaks at about $1.2$, independent of $z_{rm peak}$, while for the old population, the peak position and width of the $a_{rm nf}$ distribution both increases with decreasing $z_{rm peak}$ and are both larger than those of the young population. This bimodal distribution is found to be closely connected to the two phases in the MAHs of halos. While members of the young population are still in the fast accretion phase at $z_{rm peak}$, those of the old population have already entered the slow accretion phase at $z_{rm peak}$. This bimodal distribution is not found for the whole halo population, nor is it seen in halo merger trees generated with the extended Press-Schechter formalism. The infall halo population at $z_{rm peak}$ are, on average, younger than the whole halo population of similar masses identified at the same redshift. We discuss the implications of our findings in connection to the bimodal color distribution of observed galaxies and to the link between central and satellite galaxies.
