The charge density relaxation propagator of a two dimensional electron system, which is the slope of the imaginary part of the polarization function, exhibits singularities for bosonic momenta having the order of the spin-orbit momentum and depending
on the momentum orientation. We have provided an intuitive understanding for this non-analytic behavior in terms of the inter chirality subband electronic transitions, induced by the combined action of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit coupling. It is shown that the regular behavior of the relaxation propagator is recovered in the presence of only one BR or D spin-orbit field or for spin-orbit interaction with equal BR and D coupling strengths. This creates a new possibility to influence carrier relaxation properties by means of an applied electric field.
The presence of edges locally breaks the inversion symmetry of heterostructures and gives rise to lateral (edge) spin-orbit coupling (SOC), which, under some conditions, can lead to the formation of helical edge states. If the edge SOC is strong enou
gh, the helical edge states can penetrate the band-gap and be energetically isolated from the bulk-like states. As a result backward scattering is suppressed, dissipationless helical edge channels protected against time-inversion symmetric perturbations emerge, and the system behaves as a 2D topological insulator (TI). However, unlike in previous works on TIs, the mechanism proposed here for the creation of protected helical edge states relies on the strong edge SOC rather than on band inversion.
The interplay between spin transport and thermoelectricity offers several novel ways of generating, manipulating, and detecting nonequilibrium spin in a wide range of materials. Here we formulate a phenomenological model in the spirit of the standard
model of electrical spin injection to describe the electronic mechanism coupling charge, spin, and heat transport and employ the model to analyze several different geometries containing ferromagnetic (F) and nonmagnetic (N) regions: F, F/N, and F/N/F junctions which are subject to thermal gradients. We present analytical formulas for the spin accumulation and spin current profiles in those junctions that are valid for both tunnel and transparent (as well as intermediate) contacts. For F/N junctions we calculate the thermal spin injection efficiency and the spin accumulation induced nonequilibrium thermopower. We find conditions for countering thermal spin effects in the N region with electrical spin injection. This compensating effect should be particularly useful for distinguishing electronic from other mechanisms of spin injection by thermal gradients. For F/N/F junctions we analyze the differences in the nonequilibrium thermopower (and chemical potentials) for parallel and antiparallel orientations of the F magnetizations, as evidence and a quantitative measure of the spin accumulation in N. Furthermore, we study the Peltier and spin Peltier effects in F/N and F/N/F junctions and present analytical formulas for the heat evolution at the interfaces of isothermal junctions.
The existence of a spin-orbit coupling (SOC) induced by the gradient of the effective mass in low-dimensional heterostructures is revealed. In structurally asymmetric quasi-two-dimensional semiconductor heterostructures the presence of a mass gradien
t across the interfaces results in a SOC which competes with the SOC created by the electric field in the valence band. However, in graded quantum wells subjected to an external electric field, the mass-gradient induced SOC can be finite even when the electric field in the valence band vanishes.
By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit interaction (SOI), we show that the interplay of different SOI mechanisms induces highly ani
sotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly-singular behavior, which leads to an intriguing novel phenomenon, beating of Friedel oscillations. This effect is a general feature of systems with BR+D SOI and should be observed in structures with a sufficiently strong SOI.
The methodology used to obtain the values of the spin-orbit couplings from the spin expectation values from perturbation theory was incorrect. As a result Figs. 2 and 3 are incorrect.
Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By extending a phenom
enological model, previously proposed for explaining the main trends of the TAMR in (001) ferromagnet/semiconductor/normal-metal magnetic tunnel junctions (MTJs) [J. Moser {it et al.}, Phys. Rev. Lett. 99, 056601 (2007)], we provide a unified qualitative description of the TAMR in MTJs with different growth directions. In particular, we predict the forms of the angular dependence of the TAMR in (001),(110), and (111) MTJs with structure inversion asymmetry and/or bulk inversion asymmetry. The effects of in-plane uniaxial strain on the TAMR are also investigated.
Spin-orbit coupling induced anisotropies of plasmon dynamics are investigated in two-dimensional semiconductor structures. The interplay of the linear Bychkov-Rashba and Dresselhaus spin-orbit interactions drastically affects the plasmon spectrum: th
e dynamical structure factor exhibits variations over several decades, prohibiting plasmon propagation in specific directions. While this plasmon filtering makes the presence of spin-orbit coupling in plasmon dynamics observable, it also offers a control tool for plasmonic devices. Remarkably, if the strengths of the two interactions are equal, not only the anisotropy, but all the traces of the linear spin-orbit coupling in the collective response disappear.
Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and magnetic c
ontrol of the electrical properties, essentially the I-V characteristics, and vice versa. There are great challenges ahead to meet these goals. One challenge is to find niche applications for ferromagnetic semiconductors, such as GaMnAs. Another is to develop further the science of hybrid ferromagnetic metal/semiconductor heterostructures, as alternatives to all-semiconductor room temperature spintronics. Here we present our representative recent efiorts to address such challenges. We show how to make a digital magnetoresistor by combining two magnetic resonant diodes, or how introducing ferromagnetic semiconductors as active regions in resonant tunneling diodes leads to novel efiects of digital magnetoresistance and of magnetoelectric current oscillations. We also discuss the phenomenon of tunneling anisotropic magnetoresistance in Fe/GaAs junctions by introducing the concept of the spin-orbit coupling field, as an analog of such fields in all-semiconductor junctions. Finally, we look at fundamental electronic and optical properties of GaMnAs by employing reasonable tight-binding models to study disorder efiects.
Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin
control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.
