No Arabic abstract
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{rm u}$) and low saturation magnetization ($M_{rm s}$). We experimentally and theoretically investigated the ANE and anomalous Hall effect in sputter-deposited Mn$_4$N films. It was revealed that the observed negative anomalous Hall conductivity ($sigma_{xy}$) could be explained by two different coexisting magnetic structures, that is, a dominant magnetic structure with high $K_{rm u}$ contaminated by another structure with negligible $K_{rm u}$ owing to an imperfect degree of order of nitrogen. The observed transverse thermoelectric power ($S_{rm ANE}$) of $+0.5, mu{rm V/K}$ at $300, {rm K}$ gave a transverse thermoelectric coefficient ($alpha_{xy}$) of $+0.34, {rm A/(m cdot K)}$, which was smaller than the value predicted from first-principles calculation. The interpretation for $alpha_{xy}$ based on the first-principles calculations led us to conclude that the realization of single magnetic structure with high $K_{rm u}$ and optimal adjustment of the Fermi level are promising approaches to enhance $S_{rm ANE}$ in Mn$_4$N through the sign reversal of $sigma_{xy}$ and the enlargement of $alpha_{xy}$ up to a theoretical value of $1.77, {rm A/(m cdot K)}$.
Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transition. Epitaxial FeRh films grown on MgO (001) substrates exhibit a clear magnetic and electronic phase transition. By performing anomalous Hall and anomalous Nernst effect measurements over a wide range of temperatures, we demonstrate that the thermally driven transition shows distinctly different transverse transport on both side of the phase transition. Particularly, a sign change of both anomalous Hall and Nernst signals is observed.
Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D0$_{19}$ Mn$_3$Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn$_3$Ge films is estimated to be 0.1 $mu$V / K, and is comparable to that in ferromagnetic Fe, despite Mn$_3$Ge having a weak magnetization of ~3.5 m$mu_B$ at room temperature. The spin mixing conductance is 90.5 nm$^{-2}$ at the Py / Mn$_3$Ge interface, and the spin-Hall angle in Mn$_3$Ge is estimated to be about 8 times of that in Pt.
We study the anomalous Nernst effect (ANE) and anomalous Hall effect (AHE) in proximity-induced ferromagnetic palladium and platinum which is widely used in spintronics, within the Berry phase formalism based on the relativistic band structure calculations. We find that both the anomalous Hall ($sigma_{xy}^A$) and Nernst ($alpha_{xy}^A$) conductivities can be related to the spin Hall conductivity ($sigma_{xy}^S$) and band exchange-splitting ($Delta_{ex}$) by relations $sigma_{xy}^A =Delta_{ex}frac{e}{hbar}sigma_{xy}^S(E_F)$ and $alpha_{xy}^A = -frac{pi^2}{3}frac{k_B^2TDelta_{ex}}{hbar}sigma_{xy}^s(mu)$, respectively. In particular, these relations would predict that the $sigma_{xy}^A$ in the magnetized Pt (Pd) would be positive (negative) since the $sigma_{xy}^S(E_F)$ is positive (negative). Furthermore, both $sigma_{xy}^A$ and $alpha_{xy}^A$ are approximately proportional to the induced spin magnetic moment ($m_s$) because the $Delta_{ex}$ is a linear function of $m_s$. Using the reported $m_s$ in the magnetized Pt and Pd, we predict that the intrinsic anomalous Nernst conductivity (ANC) in the magnetic platinum and palladium would be gigantic, being up to ten times larger than, e.g., iron, while the intrinsic anomalous Hall conductivity (AHC) would also be significant.
We report the growth of noncollinear antiferromagnetic (AFM) Mn$_3$Ni$_{0.35}$Cu$_{0.65}$N films and the orientation-dependent anomalous Hall effect (AHE) of (001) and (111) films due to nonzero Berry curvature. We found that post-annealing at 500$^circ$C can significantly improve the AHE signals, though using the appropriate post-annealing conditions is important. The AHE and magnetization loops show sharp flipping at the coercive field in (111) films, while (001) films are hard to saturate by a magnetic field. The anomalous Hall conductivity of (111) films is an order of magnitude larger than that of (001) films. The present results provide not only a better understanding of the AHE in Mn$_3X$N systems but also further opportunities to study the unique phenomena related to noncollinear AFM.
Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the crystallographic D0$_{22}$ phase. The Hall resistivity $varrho_{xy}$ was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties.