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Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transition. Epitaxial FeRh films grown on MgO (001) substrates exhibit a clear magnetic and electronic phase transition. By performing anomalous Hall and anomalous Nernst effect measurements over a wide range of temperatures, we demonstrate that the thermally driven transition shows distinctly different transverse transport on both side of the phase transition. Particularly, a sign change of both anomalous Hall and Nernst signals is observed.
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We study the anomalous Nernst effect (ANE) and anomalous Hall effect (AHE) in proximity-induced ferromagnetic palladium and platinum which is widely used in spintronics, within the Berry phase formalism based on the relativistic band structure calculations. We find that both the anomalous Hall ($sigma_{xy}^A$) and Nernst ($alpha_{xy}^A$) conductivities can be related to the spin Hall conductivity ($sigma_{xy}^S$) and band exchange-splitting ($Delta_{ex}$) by relations $sigma_{xy}^A =Delta_{ex}frac{e}{hbar}sigma_{xy}^S(E_F)$ and $alpha_{xy}^A = -frac{pi^2}{3}frac{k_B^2TDelta_{ex}}{hbar}sigma_{xy}^s(mu)$, respectively. In particular, these relations would predict that the $sigma_{xy}^A$ in the magnetized Pt (Pd) would be positive (negative) since the $sigma_{xy}^S(E_F)$ is positive (negative). Furthermore, both $sigma_{xy}^A$ and $alpha_{xy}^A$ are approximately proportional to the induced spin magnetic moment ($m_s$) because the $Delta_{ex}$ is a linear function of $m_s$. Using the reported $m_s$ in the magnetized Pt and Pd, we predict that the intrinsic anomalous Nernst conductivity (ANC) in the magnetic platinum and palladium would be gigantic, being up to ten times larger than, e.g., iron, while the intrinsic anomalous Hall conductivity (AHC) would also be significant.
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{rm u}$) and low saturation magnetization ($M_{rm s}$). We experimentally and theoretically investigated the ANE and anomalous Hall effect in sputter-deposited Mn$_4$N films. It was revealed that the observed negative anomalous Hall conductivity ($sigma_{xy}$) could be explained by two different coexisting magnetic structures, that is, a dominant magnetic structure with high $K_{rm u}$ contaminated by another structure with negligible $K_{rm u}$ owing to an imperfect degree of order of nitrogen. The observed transverse thermoelectric power ($S_{rm ANE}$) of $+0.5, mu{rm V/K}$ at $300, {rm K}$ gave a transverse thermoelectric coefficient ($alpha_{xy}$) of $+0.34, {rm A/(m cdot K)}$, which was smaller than the value predicted from first-principles calculation. The interpretation for $alpha_{xy}$ based on the first-principles calculations led us to conclude that the realization of single magnetic structure with high $K_{rm u}$ and optimal adjustment of the Fermi level are promising approaches to enhance $S_{rm ANE}$ in Mn$_4$N through the sign reversal of $sigma_{xy}$ and the enlargement of $alpha_{xy}$ up to a theoretical value of $1.77, {rm A/(m cdot K)}$.
Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in a variety of ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show a universal scaling behavior of anomalous Hall conductivity $sigma_{xy}$ as a function of longitudinal conductivity $sigma_{xx}$ over five orders of magnitude, which is well explained by a recent theory of the AHE taking into account both the intrinsic and extrinsic contributions. ANE is closely related with AHE and provides us with further information about the low-temperature electronic state of itinerant ferromagnets. Temperature dependence of transverse Peltier coefficient $alpha_{xy}$ shows an almost similar behavior among various ferromagnets, and this behavior is in good agreement quantitatively with that expected from the Mott rule.
Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D0$_{19}$ Mn$_3$Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn$_3$Ge films is estimated to be 0.1 $mu$V / K, and is comparable to that in ferromagnetic Fe, despite Mn$_3$Ge having a weak magnetization of ~3.5 m$mu_B$ at room temperature. The spin mixing conductance is 90.5 nm$^{-2}$ at the Py / Mn$_3$Ge interface, and the spin-Hall angle in Mn$_3$Ge is estimated to be about 8 times of that in Pt.
Based on high-throughput first-principles calculations, we evaluated the anomalous Hall and anomalous Nernst conductivities of 266 transition-metal-based ferromagnetic compounds. Detailed analysis based on the symmetries and Berry curvatures reveals that the origin of singular-like behaviour of anomalous Hall/Nernst conductivities can be mostly attributed to the appearance of Weyl nodes or nodal lines located in the proximity of the Fermi energy, which can be further tailored by external stimuli such as biaxial strains and magnetic fields. Moreover, such calculations are enabled by the automated construction of Wannier functions with a success rate of 92%, which paves the way to perform accurate high-throughput evaluation of the physical properties such as the transport properties using the Wannier interpolation
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