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Register a new userDetection of the Chiral Spin Structure in Ferromagnetic SrRuO$_3$ Thin Film
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A SrRuO$_3$ (SRO) thin film and its heterostructure have brought much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft x-ray scattering (RSXS) at oxygen K-edge to investigate the spin configuration of a 4 unit-cell SRO film that was grown epitaxially on a single crystal SrTiO$_3$. The RSXS signal under a magnetic field (~0.4 Tesla) clearly shows a magnetic dichroism pattern around the specular reflection. Model calculations on the RSXS signal demonstrate that the magnetic dichroism pattern originates from a Neel-type chiral spin structure in this SRO thin film. We believe that the observed spin structure of the SRO system is a critical piece of information for understanding its intriguing magnetic and transport properties.
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We report on a fundamental thickness limit of the itinerant ferromagnetic oxide SrRuO$_3$ that might arise from the orbital-selective quantum confinement effects. Experimentally, SrRuO$_3$ films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature, T$_C$, starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the T$_C$ decrease to a decrease in the density of states (N$_o$). Namely, in the thin film geometry, the hybridized Ru-d$_yz,zx$ orbitals are terminated by top and bottom interfaces, resulting in quantum confinement and reduction of N$_o$.
SrRuO$_3$, a ferromagnet with an approximately 160,K Curie temperature, exhibits a $T^2$ dependent dc resistivity below $approx$ 30 K. Nevertheless, previous optical studies in the infrared and terahertz range show non-Drude dynamics at low temperatures which seem to contradict a Fermi-liquid picture with long-lived quasiparticles. In this work, we measure the low-frequency THz range response of thin films with residual resistivity ratios, $rho_{300K}/ rho_{4K} approx$ 74. Such low disorder samples allow an unprecedented look at the effects of electron-electron interactions on low-frequency transport. At temperatures below 30 K, we found both a very sharp zero-frequency mode which has a width narrower than $k_BT/hbar$ as well as a broader zero frequency Lorentzian that has at least an order of magnitude larger scattering rate. Both features have temperature dependencies consistent with a Fermi-liquid with the wider feature explicitly showing a T$^2$ scaling. Such two -Drude transport sheds light on previous reports of the violation of Mathielssens rule and extreme sensitivity to disorder in metallic ruthenates. We consider a number of possibilities for the origin of the two feature optical conductivity including multiband effects that arise from momentum conserving interband scattering and the approximate conservation of a pseudo-momentum that arises from quasi-1D Fermi surfaces.
Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin regime. We investigate the AHE and hump structure in the Hall resistivity of SRO ultra-thin films with an SrTiO$_3$ (STO) capping layer and ionic liquid gating. STO capping results in sign changes in the AHE and modulation of the hump structure. In particular, the hump structure in the Hall resistivity is strongly modulated and even vanishes in STO-capped 4 unit cell (uc) films. In addition, the conductivity of STO-capped SRO ultra-thin films is greatly enhanced with restored ferromagnetism. We also performed ionic liquid gating to modulate the electric field at SRO/STO interface. Drastic changes in the AHE and hump structure are observed with different gate voltages. Our study shows that the hump structure as well as the AHE can be controlled by tuning inversion symmetry and the electric field at the interface.
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for spintronics, as a natural spin filter or pure spin source, and as qubits for topological quantum computing. For ranges typically used in experiments, we investigate the effect of doping, substrate choice and film thickness on the (Bi, Sb)$_2$Te$_3$ unit cell using high-resolution X-ray diffractometry. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy measurements provide local structural and interfacial information. We find that the unit cell is unaffected in-plane by vanadium doping changes, and remains unchanged over a thickness range of 4--10 quintuple layers (1 QL $approx$ 1 nm). The in-plane lattice parameter ($a$) also remains the same in films grown on different substrate materials. However, out-of-plane the $c$-axis is reduced in films grown on less closely lattice-matched substrates, and increases with the doping level.
Motivated by the recently observed topological Hall effect in ultra-thin films of SrRuO$_3$ (SRO) grown on SrTiO$_3$ (STO) [001] substrate, we investigate the magnetic ground state and anomalous Hall response of the SRO ultra-thin films by virtue of spin density functional theory (DFT). Our findings reveal that in the monolayer limit of an SRO film, a large energy splitting of Ru-$t_{2g}$ states stabilizes an anti-ferromagnetic (AFM) insulating magnetic ground state. For the AFM ground state, our Berry curvature calculations predict a large anomalous Hall response upon doping. From the systematic symmetry analysis, we uncover that the large anomalous Hall effect arises due to a combination of broken time-reversal and crystal symmetries caused by the arrangement of non-magnetic atoms (Sr and O) in the SRO monolayer. We identify the emergent Hall effect as a clear manifestation of the so-called crystal Hall effect in terminology of v{S}mejkal et al. arXiv:1901.00445 (2019), and demonstrate that it persists at finite frequencies which is the manifestation of the crystal magneto-optical effect. Moreover, we find a colossal dependence of the AHE on the degree of crystal symmetry breaking also in ferromagnetic SRO films, which all together points to an alternative explanation of the emergence of the topological Hall effect observed in this type of systems.
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