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Sub-THz momentum drag and violation of Matthiessens rule in an ultraclean ferromagnetic SrRuO$_3$ metallic thin film

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 Added by Youcheng Wang
 Publication date 2020
  fields Physics
and research's language is English




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SrRuO$_3$, a ferromagnet with an approximately 160,K Curie temperature, exhibits a $T^2$ dependent dc resistivity below $approx$ 30 K. Nevertheless, previous optical studies in the infrared and terahertz range show non-Drude dynamics at low temperatures which seem to contradict a Fermi-liquid picture with long-lived quasiparticles. In this work, we measure the low-frequency THz range response of thin films with residual resistivity ratios, $rho_{300K}/ rho_{4K} approx$ 74. Such low disorder samples allow an unprecedented look at the effects of electron-electron interactions on low-frequency transport. At temperatures below 30 K, we found both a very sharp zero-frequency mode which has a width narrower than $k_BT/hbar$ as well as a broader zero frequency Lorentzian that has at least an order of magnitude larger scattering rate. Both features have temperature dependencies consistent with a Fermi-liquid with the wider feature explicitly showing a T$^2$ scaling. Such two -Drude transport sheds light on previous reports of the violation of Mathielssens rule and extreme sensitivity to disorder in metallic ruthenates. We consider a number of possibilities for the origin of the two feature optical conductivity including multiband effects that arise from momentum conserving interband scattering and the approximate conservation of a pseudo-momentum that arises from quasi-1D Fermi surfaces.

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We report on a fundamental thickness limit of the itinerant ferromagnetic oxide SrRuO$_3$ that might arise from the orbital-selective quantum confinement effects. Experimentally, SrRuO$_3$ films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature, T$_C$, starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the T$_C$ decrease to a decrease in the density of states (N$_o$). Namely, in the thin film geometry, the hybridized Ru-d$_yz,zx$ orbitals are terminated by top and bottom interfaces, resulting in quantum confinement and reduction of N$_o$.
100 - H. Huang , S.-J. Lee , B. Kim 2020
A SrRuO$_3$ (SRO) thin film and its heterostructure have brought much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft x-ray scattering (RSXS) at oxygen K-edge to investigate the spin configuration of a 4 unit-cell SRO film that was grown epitaxially on a single crystal SrTiO$_3$. The RSXS signal under a magnetic field (~0.4 Tesla) clearly shows a magnetic dichroism pattern around the specular reflection. Model calculations on the RSXS signal demonstrate that the magnetic dichroism pattern originates from a Neel-type chiral spin structure in this SRO thin film. We believe that the observed spin structure of the SRO system is a critical piece of information for understanding its intriguing magnetic and transport properties.
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Perovskite SrRuO$_3$ is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report synthesis and investigation of atomically flat artificial multilayers of SrRuO$_3$ with the spin-orbit semimetal SrIrO$_3$ in combination with band-structure calculations with a Hubbard $U$ term and topological analysis. They reveal an electronic reconstruction and emergence of flat Ru-4d$_{xz}$ bands near the interface, ferromagnetic interlayer coupling and negative Berry-curvature contribution to the anomalous Hall effect. We analyze the Hall effect and magnetoresistance measurements as a function of the field angle from out of plane towards in-plane orientation (either parallel or perpendicular to the current direction) by a two-channel model. The magnetic easy direction is tilted by about $20^circ$ from the sample normal for low magnetic fields, rotating towards the out-of-plane direction by increasing fields. Fully strained epitaxial growth enables a strong anisotropy of magnetoresistance. An additional Hall effect contribution, not accounted for by the two-channel model is compatible with stable skyrmions only up to a critical angle of roughly $45^circ$ from the sample normal. Within about $20^circ$ from the thin film plane an additional peak-like contribution to the Hall effect suggests the formation of a non-trivial spin structure.
A controversy arose over the interpretation of the recently observed hump features in Hall resistivity $rho_{xy}$ from ultra-thin SrRuO$_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films grown on SrTiO$_3$ (001) substrates. Clear hump features are observed in the measured $rho_{xy}$, whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in $rho_{xy}$ data from our SRO ultra-thin films. We found that emergence of the hump structure in $rho_{xy}$ is closely related to the growth condition, high quality films having clear sign of humps.
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