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Register a new userProbing Charging and Localization in the Quantum Hall Regime by Graphene pnp Junctions
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Added by
Chun Ning (Jeanie) Lau
Publication date
2009
fields
Physics
and research's language is
English
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Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines that are parallel to those of the adjacent plateaus, with different temperature dependences for the conductance peaks and valleys. These fluctuations arise from Coulomb-induced charging of electron- or hole-doped localized states when the device bulk is delocalized, underscoring the importance of electronic interactions in graphene in the QH regime.
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Owing to a linear and gapless band structure and a tunability of the charge carrier type, graphene offers a unique system to investigate transport of Dirac Fermions at p-n junctions (PNJs). In a magnetic field, combination of quantum Hall physics and the characteristic transport across PNJs leads to a fractionally quantized conductance associated with the mixing of electron-like and hole-like modes and their subsequent partitioning. The mixing and partitioning suggest that a PNJ could be used as an electronic beam-splitter. Here we report the shot noise study of the mode mixing process and demonstrate the crucial role of the PNJ length. For short PNJs, the amplitude of the noise is consistent with an electronic beam-splitter behavior, whereas, for longer PNJs, it is reduced by the energy relaxation. Remarkably, the relaxation length is much larger than typical size of mesoscopic devices, encouraging using graphene for electron quantum optics and quantum information processing.
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to 20,000 at 260mK. Within the band gap, the conductance decreases exponentially by 3 orders of magnitude with increasing electric field, and can be accounted for by variable range hopping with a gate-tunable density of states, effective mass, and localization length. At large B, we observe quantum Hall conductance with fractional values, which arise from equilibration of edge states between differentially-doped regions, and the presence of an insulating state at filling factor { u}=0. Our work underscores the importance of bilayer graphene for both fundamental interest and technological applications.
Optical excitation provides a powerful tool to investigate non-equilibrium physics in quantum Hall systems. Moreover, the length scale associated with photo-excited charge carries lies between that of local probes and global transport measurements. Here, we investigate non-equilibrium physics of optically-excited charge carriers in graphene through photocurrent measurements in the integer quantum Hall regime. We observe that the photocurrent oscillates as a function of Fermi level, revealing the Landau-level quantization, and that the photocurrent oscillations are different for Fermi levels near and distant from the Dirac point. Our observation qualitatively agrees with a model that assumes the photocurrent is dominated by chiral edge transport of non-equilibrium carriers. Our experimental results are consistent with electron and hole chiralities being the same when the Fermi level is distant from the Dirac point, and opposite when near the Dirac point.
In this study, we examine multiple encapsulated graphene Josephson junctions to determine which mechanisms may be responsible for the supercurrent observed in the quantum Hall (QH) regime. Rectangular junctions with various widths and lengths were studied to identify which parameters affect the occurrence of QH supercurrent. We also studied additional samples where the graphene region is extended beyond the contacts on one side, making that edge of the mesa significantly longer than the opposite edge. This is done in order to distinguish two potential mechanisms: a) supercurrents independently flowing along both non-contacted edges of graphene mesa, and b) opposite sides of the mesa being coupled by hybrid electron-hole modes flowing along the superconductor/graphene boundary. The supercurrent appears suppressed in extended junctions, suggesting the latter mechanism.
Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating quantum Hall edge channels tens of nanometres from each other. Transport measurements demonstrate a change in the low-field Fraunhofer interference pattern for trench devices and show a supercurrent in both trench and reference junctions in the quantum Hall regime. The trench junctions show no enhancement of quantum Hall supercurrent and an unexpected supercurrent periodicity with applied field, suggesting the need for further optimization of device parameters.
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