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Register a new userInvestigation of Supercurrent in the Quantum Hall Regime in Graphene Josephson Junctions
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Anne Watson Draelos
Publication date
2018
fields
Physics
and research's language is
English
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In this study, we examine multiple encapsulated graphene Josephson junctions to determine which mechanisms may be responsible for the supercurrent observed in the quantum Hall (QH) regime. Rectangular junctions with various widths and lengths were studied to identify which parameters affect the occurrence of QH supercurrent. We also studied additional samples where the graphene region is extended beyond the contacts on one side, making that edge of the mesa significantly longer than the opposite edge. This is done in order to distinguish two potential mechanisms: a) supercurrents independently flowing along both non-contacted edges of graphene mesa, and b) opposite sides of the mesa being coupled by hybrid electron-hole modes flowing along the superconductor/graphene boundary. The supercurrent appears suppressed in extended junctions, suggesting the latter mechanism.
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Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating quantum Hall edge channels tens of nanometres from each other. Transport measurements demonstrate a change in the low-field Fraunhofer interference pattern for trench devices and show a supercurrent in both trench and reference junctions in the quantum Hall regime. The trench junctions show no enhancement of quantum Hall supercurrent and an unexpected supercurrent periodicity with applied field, suggesting the need for further optimization of device parameters.
We investigate the electronic properties of ballistic planar Josephson junctions with multiple superconducting terminals. Our devices consist of monolayer graphene encapsulated in boron nitride with molybdenum-rhenium contacts. Resistance measurements yield multiple resonant features, which are attributed to supercurrent flow among adjacent and non-adjacent Josephson junctions. In particular, we find that superconducting and dissipative currents coexist within the same region of graphene. We show that the presence of dissipative currents primarily results in electron heating and estimate the associated temperature rise. We find that the electrons in encapsulated graphene are efficiently cooled through the electron-phonon coupling.
We investigate the Josephson effect in a bilayer graphene flake contacted by two monolayer sheet deposited by superconducting electrodes. It is found that when the electrodes are attached to the different layers of the bilayer, the Josephson current is in a $pi$ state when the bilayer region is undoped and in the absence of vertical bias. Applying doping or bias to the junction reveals $pi-0$ transitions which can be controlled by varying the temperature and the junction length. The supercurrent reversal here is very different from the ferromagnetic Josephson junctions where the spin degree of freedom plays the key role. We argue that the scattering processes accompanied by layer and sublattice index change give rise to the scattering phases which their effect varies with doping and the bias. Such scattering phases are responsible for the $pi-0$ transitions. On the other hand if both of the electrodes are coupled to the same layer of the flake or the flake has AA stacking instead of common AB, the junction will be always in $0$ state since layer or sublattice index is not changed.
Semiconductor-superconductor hybrid systems provide a promising platform for hosting unpaired Majorana fermions towards the realisation of fault-tolerant topological quantum computing. In this study, we employ the Keldysh Non-Equilibrium Greens function formalism to model quantum transport in normal-superconductor junctions. We analyze III-V semiconductor nanowire Josephson junctions (InAs/Nb) using a three-dimensional discrete lattice model described by the Bogolubov-de Gennes Hamiltonian in the tight-binding approximation, and compute the Andreev bound state spectrum and current-phase relations. Recent experiments [Zuo et al., Phys. Rev. Lett. 119,187704 (2017)] and [Gharavi et al., arXiv:1405.7455v2 (2014)] reveal critical current oscillations in these devices, and our simulations confirm these to be an interference effect of the transverse sub-bands in the nanowire. We add disorder to model coherent scattering and study its effect on the critical current oscillations, with an aim to gain a thorough understanding of the experiments. The oscillations in the disordered junction are highly sensitive to the particular realisation of the random disorder potential, and to the gate voltage. A macroscopic current measurement thus gives us information about the microscopic profile of the junction. Finally, we study dephasing in the channel by including elastic phase-breaking interactions. The oscillations thus obtained are in good qualitative agreement with the experimental data, and this signifies the essential role of phase-breaking processes in III-V semiconductor nanowire Josephson junctions.
We study mesoscopic fluctuations and weak localization correction to the supercurrent in Josephson junctions with coherent diffusive electron dynamics in the normal part. Two kinds of junctions are considered: a chaotic dot coupled to superconductors by tunnel barriers and a diffusive junction with transparent normal--superconducting interfaces. The amplitude of current fluctuations and the weak localization correction to the average current are calculated as functions of the ratio between the superconducting gap and the electron dwell energy, temperature, and superconducting phase difference across the junction. Technically, fluctuations on top of the spatially inhomogeneous proximity effect in the normal region are described by the replicated version of the sigma-model. For the case of diffusive junctions with transparent interfaces, the magnitude of mesoscopic fluctuations of the critical current appears to be nearly 3 times larger than the prediction of the previous theory which did not take the proximity effect into account.
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