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Register a new userThe observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3
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The temperature dependences of magnetization, electrical transport, and thermal transport properties of antiperovskite compound SnCMn3 have been investigated systematically. A positive magnetoresistance (~11%) is observed around the ferrimagnetic-paramagnetic transition (TC ~ 280 K) in the field of 50 kOe, which can be attributed to the field-induced magnetic phase transition. The abnormalities of resistivity, Seebeck coefficient, normal Hall effect and thermal conductivity near TC are suggested to be associated with an abrupt reconstruction of electronic structure. Further, our results indicate an essential interaction among lattice, spin and charge degrees of freedom around TC. Such an interaction among various degrees of freedom associated with sudden phase transition is suggested to be characteristic of Mn-based antiperovskite compounds.
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We report the observation of large magnetocaloric effect near room temperature in antipervoskite SnCMn3. The maximal magnetic entropy change at the first-order ferrimagnetic-paramagnetic transition temperature (TC 279 K) is about 80.69mJ/cm3 K and 133mJ/cm3 K under the magnetic field of 20 kOe and 48 kOe, respectively. These values are close to those of typical magnetocaloric materials. The large magnetocaloric effect is associated with the sharp change of lattice, resistivity and magnetization in the vicinity of TC. Through the measurements of Seebeck coefficient and normal Hall effect, the title system is found to undergo a reconstruction of electronic structure at TC. Considering its low-cost and innocuous raw materials, Mn-based antiperovskite compounds are suggested to be appropriate for pursuing new materials with larger magnetocaloric effect.
Spin crossover plays a central role in the structural instability, net magnetic moment modification, metallization, and even in superconductivity in corresponding materials. Most reports on the pressure-induced spin crossover with a large volume collapse so far focused on compounds with single transition metal. Here we report a comprehensive high-pressure investigation of a mixed Fe-Mn perovskite La2FeMnO6. Under pressure, the strong coupling between Fe and Mn leads to a combined valence/spin transition: Fe3+(S = 5/2) to Fe2+(S = 0) and Mn3+(S = 2) to Mn4+(S = 3/2), with an isostructural phase transition. The spin transitions of both Fe and Mn are offset by ~ 20 GPa of the onset pressure, and the lattice collapse occurs in between. Interestingly, Fe3+ ion shows an abnormal behavior when it reaches a lower valence state (Fe2+) accompanied by a + 0.5 eV energy shift in Fe K-absorption edge at 15 GPa. This process is associated with the charge-spin-orbital state transition from high spin Fe3+ to low spin Fe2+, caused by the significantly enhanced t2g-eg crystal field splitting in the compressed lattice under high pressure. Density Functional Theory calculations confirm the energy preference of the high-pressure state with charge redistribution accompanied by spin state transition of Fe ions. Moreover, La2FeMnO6 maintains semiconductor behaviors even when the pressure reached 144.5 GPa as evidenced by the electrical transport measurements, despite the huge resistivity decreasing 7 orders of magnitude compared with that at ambient pressure. The investigation carried out here demonstrates high flexibility of double perovskites and their good potentials for optimizing the functionality of these materials.
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or Kondo semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.
We report here the magneto-transport properties of the newly synthesized Heusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structure belonging to Pm-3m space group. The sample is found to be paramagnetic down to 2 K with metallic character. On application of magnetic field, a significantly large increase in resistivity is observed which corresponds to magnetoresistance as high as 112% at 150 kOe of field at the lowest temperature. Most remarkably, the sample shows negative temperature coefficient of resistivity below about 50 K under the application of field gretare than or equal to 80 kOe, signifying a field-induced metal to `insulating transition. The observed magnetoresistance follows Kohlers rule below 20 K indicating the validity of the semiclassical model of electronic transport in metal with a single relaxation time. A multi-band model for electronic transport, originally proposed for semimetals, is found to be appropriate to describe the magneto-transport behavior of the sample.
We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alternative explanation, related to a possible magnetic instability, is also discussed.
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