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Register a new userGiant Positive Magnetoresistance and field-induced metal insulator transition in Cr2NiGa
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We report here the magneto-transport properties of the newly synthesized Heusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structure belonging to Pm-3m space group. The sample is found to be paramagnetic down to 2 K with metallic character. On application of magnetic field, a significantly large increase in resistivity is observed which corresponds to magnetoresistance as high as 112% at 150 kOe of field at the lowest temperature. Most remarkably, the sample shows negative temperature coefficient of resistivity below about 50 K under the application of field gretare than or equal to 80 kOe, signifying a field-induced metal to `insulating transition. The observed magnetoresistance follows Kohlers rule below 20 K indicating the validity of the semiclassical model of electronic transport in metal with a single relaxation time. A multi-band model for electronic transport, originally proposed for semimetals, is found to be appropriate to describe the magneto-transport behavior of the sample.
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The gigantic reduction of the electric resistivity under the applied magnetic field, CMR effect, is now widely accepted to appear in the vicinity of the insulator to metal transition of the perovskite manganites. Recently, we have discovered the first order transition from ferromagnetic metal to insulator in $rm La_{0.88}Sr_{0.12}MnO_3$ of the CMR manganite. This phase transition induces the tremendous increase of the resistivity under the external magnetic field just near above the phase transition temperature. We report here fairly detailed results from the systematic experiments including neutron and synchrotron X-ray scattering studies.
The paper has been withdrawn for some reasons
We report the existence of a field-induced ferromagnetic transition in the magnetically ordered state (<69 K) of an intermetallic compound, Tb5Si3, and this transition is distinctly first-order at 1.8 K (near 60 kOe), whereas it appears to become second order near 20 K. The finding we stress is that the electrical resistivity becomes suddenly large in the high-field state after this transition and this is observed in the entire temperature range in the magnetically ordered state. Such an enhancement of positive magnetoresistance (below 100 kOe) at the metamagnetic transition field is unexpected on the basis that the application of magnetic field should favor a low-resistive state due to alignment of spins.
The pressure-induced insulator to metal transition (IMT) of layered magnetic nickel phosphorous tri-sulfide NiPS3 was studied in-situ under quasi-uniaxial conditions by means of electrical resistance (R) and X-ray diffraction (XRD) measurements. This sluggish transition is shown to occur at 35 GPa. Transport measurements show no evidence of superconductivity to the lowest measured temperature (~ 2 K). The structure results presented here differ from earlier in-situ work that subjected the sample to a different pressure state, suggesting that in NiPS3 the phase stability fields are highly dependent on strain. It is suggested that careful control of the strain is essential when studying the electronic and magnetic properties of layered van der Waals solids.
We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alternative explanation, related to a possible magnetic instability, is also discussed.
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