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Register a new userGiant positive magnetoresistance in metallic VOx thin films
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We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alternative explanation, related to a possible magnetic instability, is also discussed.
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We report here the magneto-transport properties of the newly synthesized Heusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structure belonging to Pm-3m space group. The sample is found to be paramagnetic down to 2 K with metallic character. On application of magnetic field, a significantly large increase in resistivity is observed which corresponds to magnetoresistance as high as 112% at 150 kOe of field at the lowest temperature. Most remarkably, the sample shows negative temperature coefficient of resistivity below about 50 K under the application of field gretare than or equal to 80 kOe, signifying a field-induced metal to `insulating transition. The observed magnetoresistance follows Kohlers rule below 20 K indicating the validity of the semiclassical model of electronic transport in metal with a single relaxation time. A multi-band model for electronic transport, originally proposed for semimetals, is found to be appropriate to describe the magneto-transport behavior of the sample.
We report the magnetotransport properties of self-assembled Co@CoO nanoparticle arrays at temperatures below 100 K. Resistance shows thermally activated behavior that can be fitted by the general expression of R exp{(T/T0)^v}. Efros-Shklovskii variable range hopping (v=1/2) and simple activation (hard gap, v=1) dominate the high and low temperature region, respectively, with a strongly temperature-dependent transition regime in between. A giant positive magnetoresistance of >1,400% is observed at 10K, which decreases with increasing temperature. The positive MR and most of its features can be explained by the Zeeman splitting of the localized states that suppresses the spin dependent hopping paths in the presence of on-site Coulomb repulsion.
We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-RBS and the vanadium valence using XAS. The upper and lower stoichiometry limits found are similar to the ones known for bulk material (0.8<x<1.3). From the RHEED oscillation period a large number of vacancies for both vanadium and oxygen were deduced, i.e. ~16% for stoichiometric VO. These numbers are, surprisingly, very similar to those for bulk material and consequently quite strain-insensitive. XAS measurements reveal that the vacancies give rise to strong low symmetry ligand fields to be present. The electrical conductivity of the films is much lower than the conductivity of bulk samples which we attribute to a decrease in the direct overlap between t2g orbitals in the coherently strained layers. The temperature dependence of the conductivity is consistent with a variable range hopping mechanism.
The magnetic, thermodynamic and electrical/thermal transport properties of the caged-structure quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$ are re-investigated. The magnetization $M(T)$, specific heat $C_p(T)$ and the resistivity $rho(T)$ reveal a double-phase transition -- at $T_{N1}sim$ 10~K and at $T_{N2}sim$ 8.8~K -- which was not observed in the previous report on this compound. The antiferromagnetic transition is also visible in the thermal transport data, thereby suggesting a close connection between the electronic and lattice degrees of freedom in this Sn-based quasi-skutterudite. The temperature dependence of $rho(T)$ is analyzed in terms of a power-law for resistivity pertinent to Fermi liquid picture. Giant, positive magnetoresistance (MR) $approx$ 80$%$ is observed in Gd$_3$Ir$_4$Sn$_{13}$ at 2~K with the application of 9~T. The giant MR and the double magnetic transition can be attributed to the quasi-cages and layered antiferromagnetic structure of Gd$_3$Ir$_4$Sn$_{13}$ vulnerable to structural distortions and/or dipolar or spin-reorientation effects. The giant value of MR observed in this class of 3:4:13 type alloys, especially in a Gd-compound, is the highlight of this work.
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or Kondo semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.
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