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Register a new userEnergy gaps in etched graphene nanoribbons
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Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary by up to 30% for different localized states which must therefore be spread in position along the ribbon. A single-electron transistor is used to prove the addition of individual electrons to the localized states. In our sample the characteristic charging energy is of the order of 10 meV, the characteristic strength of the disorder potential of the order of 100 meV.
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We report a first-principles study on electronic structures of the deformed armchair graphene nanoribbons (AGNRs). The variation of the energy gap of AGNRs as a function of uniaxial strain displays a zigzag pattern, which indicates that the energy gaps of AGNRs can be effectively tuned. The spatial distributions of two occupied and two empty subbands close to the Fermi level are swapped under different strains. The tunable width of energy gaps becomes narrower as increasing the width of AGNRs. Our simulations with tight binding approximation, including the nearest neighbor hopping integrals between $pi$- orbitals of carbon atoms, reproduce these results by first-principles calculations. One simple empirical formula is obtained to describe the scaling behavior of the maximal value of energy gap as a function of the width of AGNRs.
We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We show that the zero-energy Landau level (LL) in monolayer graphene, which is predicted to be magnetic field ($B$)-independent, can float up above the Fermi energy at low $B$. This is supported by the temperature ($T$)-driven flow diagram approximated by the semi-circle law as well as the $T$-independent point in the Hall conductivity $sigma_{xy}$ near $e^2/h$. Our experimental data are in sharp contrast to conventional understanding of the zeroth LL and metallic-like behavior in pristine graphene prepared by mechanical exfoliation at low $T$. This surprising result can be ascribed to substrate-induced sublattice symmetry breaking which splits the degeneracy of the zeroth Landau level. Our finding provides a unified picture regarding the metallic behavior in pristine graphene prepared by mechanical exfoliation, and the insulating behavior and the insulator-quantum Hall transition in monolayer epitaxial graphene.
We develop a theory for a qualitatively new type of disorder in condensed matter systems arising from local twist-angle fluctuations in two strongly coupled van der Waals monolayers twisted with respect to each other to create a flat band moire superlattice. The new paradigm of twist angle disorder arises from the currently ongoing intense research activity in the physics of twisted bilayer graphene. In experimental samples of pristine twisted bilayer graphene, which are nominally free of impurities and defects, the main source of disorder is believed to arise from the unavoidable and uncontrollable non-uniformity of the twist angle across the sample. To address this new physics of twist-angle disorder, we develop a real-space, microscopic model of twisted bilayer graphene where the angle enters as a free parameter. In particular, we focus on the size of single-particle energy gaps separating the miniband from the rest of the spectrum, the Van Hove peaks, the renormalized Dirac cone velocity near charge neutrality, and the minibandwidth. We find that the energy gaps and minibandwidth are strongly affected by disorder while the renormalized velocity remains virtually unchanged. We discuss the implications of our results for the ongoing experiments on twisted bilayer graphene. Our theory is readily generalized to future studies of twist angle disorder effects on all electronic properties of moire superlattices created by twisting two coupled van der Waals materials with respect to each other.
Matrix elements of electron-light interactions for armchair and zigzag graphene nanoribbons are constructed analytically using a tight-binding model. The changes in wavenumber ($Delta n$) and pseudospin are the necessary elements if we are to understand the optical selection rule. It is shown that an incident light with a specific polarization and energy, induces an indirect transition ($Delta n=pm1$), which results in a characteristic peak in absorption spectra. Such a peak provides evidence that the electron standing wave is formed by multiple reflections at both edges of a ribbon. It is also suggested that the absorption of low-energy light is sensitive to the position of the Fermi energy, direction of light polarization, and irregularities in the edge. The effect of depolarization on the absorption peak is briefly discussed.
Graphene nanoribbons are widely regarded as promising building blocks for next-generation carbon-based devices. A critical issue to their prospective applications is whether and to what degree their electronic structure can be externally controlled. Here, we combine simple model Hamiltonians with extensive first-principles calculations to investigate the response of armchair graphene nanoribbons to transverse electric fields. Such fields can be achieved either upon laterally gating the nanoribbon or incorporating ambipolar chemical co-dopants along the edges. We reveal that the field induces a semiconductor-to-semimetal transition, with the semimetallic phase featuring zero-energy Dirac fermions that propagate along the armchair edges. The transition occurs at critical fields that scale inversely with the width of the nanoribbons. These findings are universal to group-IV honeycomb lattices, including silicene and germanene nanoribbons, irrespective of the type of edge termination. Overall, our results create new opportunities to electrically engineer Dirac fermions in otherwise semiconducting graphene-like nanoribbons.
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