Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userElectrically Induced Dirac Fermions in Graphene Nanoribbons
219
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Graphene nanoribbons are widely regarded as promising building blocks for next-generation carbon-based devices. A critical issue to their prospective applications is whether and to what degree their electronic structure can be externally controlled. Here, we combine simple model Hamiltonians with extensive first-principles calculations to investigate the response of armchair graphene nanoribbons to transverse electric fields. Such fields can be achieved either upon laterally gating the nanoribbon or incorporating ambipolar chemical co-dopants along the edges. We reveal that the field induces a semiconductor-to-semimetal transition, with the semimetallic phase featuring zero-energy Dirac fermions that propagate along the armchair edges. The transition occurs at critical fields that scale inversely with the width of the nanoribbons. These findings are universal to group-IV honeycomb lattices, including silicene and germanene nanoribbons, irrespective of the type of edge termination. Overall, our results create new opportunities to electrically engineer Dirac fermions in otherwise semiconducting graphene-like nanoribbons.
rate research
Read More
We revisit the effect of local interactions on the quadratic band touching (QBT) of Bernal stacked bilayer graphene models using renormalization group (RG) arguments and quantum Monte Carlo simulations of the Hubbard model. We present an RG argument which predicts, contrary to previous studies, that weak interactions do not flow to strong coupling even if the free dispersion has a QBT. Instead they generate a linear term in the dispersion, which causes the interactions to flow back to weak coupling. Consistent with this RG scenario, in unbiased quantum Monte Carlo simulations of the Hubbard model we find compelling evidence that antiferromagnetism turns on at a finite $U/t$, despite the $U=0$ hopping problem having a QBT. The onset of antiferromagnetism takes place at a continuous transition which is consistent with a dynamical critical exponent $z=1$ as expected for 2+1 d Gross-Neveu criticality. We conclude that generically in models of bilayer graphene, even if the free dispersion has a QBT, small local interactions generate a Dirac phase with no symmetry breaking and that there is a finite-coupling transition out of this phase to a symmetry-broken state.
Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications.
The analogues of elementary particles have been extensively searched for in condensed matter systems because of both scientific interests and technological applications. Recently massless Dirac fermions were found to emerge as low energy excitations in the materials named Dirac semimetals. All the currently known Dirac semimetals are nonmagnetic with both time-reversal symmetry $mathcal{T}$ and inversion symmetry $mathcal{P}$. Here we show that Dirac fermions can exist in one type of antiferromagnetic systems, where $mathcal{T}$ and $mathcal{P}$ are broken but their combination $mathcal{PT}$ is respected. We propose orthorhombic antiferromagnet CuMnAs as a candidate, analyze the robustness of the Dirac points with symmetry protections, and demonstrate its distinctive bulk dispersions as well as the corresponding surface states by emph{ab initio} calculations. Our results give a new route towards the realization of Dirac materials, and provide a possible platform to study the interplay of Dirac fermion physics and magnetism.
We investigate the ultrafast relaxation dynamics of hot Dirac fermionic quasiparticles in multilayer epitaxial graphene using ultrafast optical differential transmission spectroscopy. We observe DT spectra which are well described by interband transitions with no electron-hole interaction. Following the initial thermalization and emission of high-energy phonons, the electron cooling is determined by electron-acoustic phonon scattering, found to occur on the time scale of 1 ps for highly doped layers, and 4-11 ps in undoped layers. The spectra also provide strong evidence for the multilayer stucture and doping profile of thermally grown epitaxial graphene on SiC.
Matrix elements of electron-light interactions for armchair and zigzag graphene nanoribbons are constructed analytically using a tight-binding model. The changes in wavenumber ($Delta n$) and pseudospin are the necessary elements if we are to understand the optical selection rule. It is shown that an incident light with a specific polarization and energy, induces an indirect transition ($Delta n=pm1$), which results in a characteristic peak in absorption spectra. Such a peak provides evidence that the electron standing wave is formed by multiple reflections at both edges of a ribbon. It is also suggested that the absorption of low-energy light is sensitive to the position of the Fermi energy, direction of light polarization, and irregularities in the edge. The effect of depolarization on the absorption peak is briefly discussed.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
