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Register a new userExciton condensate at a total filling factor of 1 in Corbino 2D electron bilayers
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Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current.
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Tunneling spectroscopy reveals evidence for interlayer electron-hole correlations in quantum Hall bilayer two-dimensional electron systems at layer separations near, but above, the transition to the incompressible exciton condensate at total Landau level filling $ u_T=1$. These correlations are manifested by a non-linear suppression of the Coulomb pseudogap which inhibits low energy interlayer tunneling in weakly-coupled bilayers. The pseudogap suppression is strongest at $ u_T=1$ and grows rapidly as the critical layer separation for exciton condensation is approached from above.
We study the frictional drag in high mobility, strongly interacting GaAs bilayer hole systems in the vicinity of the filling factor $ u=1$ quantum Hall state (QHS), at the same fillings where the bilayer resistivity displays a reentrant insulating phase. Our measurements reveal a very large longitudinal drag resistivity ($rho^{D}_{xx}$) in this regime, exceeding 15 k$Omega/Box$ at filling factor $ u=1.15$. $rho^{D}_{xx}$ shows a weak temperature dependence and appears to saturate at a finite, large value at the lowest temperatures. Our observations are consistent with theoretical models positing a phase separation, e.g. puddles of $ u=1$ QHS embedded in a different state, when the system makes a transition from the coherent $ u=1$ QHS to the weakly coupled $ u=2$ QHS.
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
Optical absorption measurements are used to probe the spin polarization in the integer and fractional quantum Hall effect regimes. The system is fully spin polarized only at filling factor $ u=1$ and at very low temperatures($sim40$ mK). A small change in filling factor ($delta uapproxpm0.01$) leads to a significant depolarization. This suggests that the itinerant quantum Hall ferromagnet at $ u=1$ is surprisingly fragile against increasing temperature, or against small changes in filling factor.
By simultaneous measurements of the attenuation and velocity of surface acoustic waves propagating in proximity to a high-quality GaAs quantum well we study the complex AC conductance of the two-dimensional electron system. Focusing on the vicinity of the filling factor $ u=1/5$ we confirm that the insulating states formed closely to this value of $ u$ are pinned Wigner crystals.
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