Do you want to publish a course? Click here

Giant frictional drag in strongly interacting bilayers near filling factor one

129   0   0.0 ( 0 )
 Added by Emanuel Tutuc
 Publication date 2008
  fields Physics
and research's language is English




Ask ChatGPT about the research

We study the frictional drag in high mobility, strongly interacting GaAs bilayer hole systems in the vicinity of the filling factor $ u=1$ quantum Hall state (QHS), at the same fillings where the bilayer resistivity displays a reentrant insulating phase. Our measurements reveal a very large longitudinal drag resistivity ($rho^{D}_{xx}$) in this regime, exceeding 15 k$Omega/Box$ at filling factor $ u=1.15$. $rho^{D}_{xx}$ shows a weak temperature dependence and appears to saturate at a finite, large value at the lowest temperatures. Our observations are consistent with theoretical models positing a phase separation, e.g. puddles of $ u=1$ QHS embedded in a different state, when the system makes a transition from the coherent $ u=1$ QHS to the weakly coupled $ u=2$ QHS.



rate research

Read More

We derive electronic structure models for weakly interacting bilayers such as graphene-graphene and graphene-hexagonal boron nitride, based on density functional theory calculations followed by Wannier transformation of electronic states. These transferable interlayer coupling models can be applied to investigate the physics of bilayers with arbitrary translations and twists. The functional form, in addition to the dependence on the distance, includes the angular dependence that results from higher angular momentum components in the Wannier $p_z$ orbitals. We demonstrate the capabilities of the method by applying it to a rotated graphene bilayer, which produces the analytically predicted renormalization of the Fermi velocity, van Hove singularities in the density of states, and Moir{e} pattern of the electronic localization at small twist angles. We further extend the theory to obtain the effective couplings by integrating out neighboring layers. This approach is instrumental for the design of van der Walls heterostructures with desirable electronic features and transport properties and for the derivation of low-energy theories for graphene stacks, including proximity effects from other layers.
Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current.
We study the effect of thermal and quantum fluctuations on the dynamical response of a one-dimensional strongly-interacting Bose gas in a tight atomic waveguide. We combine the Luttinger liquid theory at arbitrary interactions and the exact Bose-Fermi mapping in the Tonks-Girardeau-impenetrable-boson limit to obtain the dynamic structure factor of the strongly-interacting fluid at finite temperature. Then, we determine the drag force felt by a potential barrier moving along the fluid in the experimentally realistic situation of finite barrier width and temperature.
117 - E. H. Hwang , S. Das Sarma 2008
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe2 potential for the application in the high-performance flexible and transparent electronics.
comments
Fetching comments Fetching comments
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا