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Register a new userHigh precision quantum control of single donor spins in silicon
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The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark coefficient obtained from both theories agrees closely with the experiments. This work represents the most sensitive and precise comparison between theory and experiment for single donor spin control. It is also shown that there is a significant linear Stark effect for an impurity near the interface, whereas, far from the interface, the quadratic Stark effect dominates. Such precise control of single donor spin states is required particularly in quantum computing applications of single donor electronics, which forms the driving motivation of this work.
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Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and exciting technological revolution. In this article we describe the use of ion-implanted donor spins in silicon for quantum technologies. We review how to fabricate and operate single-atom spin qubits in silicon, obtaining some of the most coherent solid-state qubits, and we discuss pathways to scale up these qubits to build large quantum processors. Heavier group-V donors with large nuclear spins display electric quadrupole couplings that enable nuclear electric resonance, quantum chaos and strain sensing. Donor ensembles can be coupled to microwave cavities to develop hybrid quantum Turing machines. Counted, deterministic implantation of single donors, combined with novel methods for precision placement, will allow the integration of individual donors spins with industry-standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution.
We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the application of light and bias voltage pulses. To determine the coherence times of superpositions of all orders in the 4-dimensional Hilbert space, we use a phase-cycling technique and find that, when electrical effects were allowed to decay, these times scale as expected for a field-like decoherence mechanism such as the interaction with surrounding $^{29}$Si nuclear spins.
The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control operating on the picosecond or faster timescale may be necessary. Such speeds, which are not possible to attain with standard electron spin resonance (ESR) techniques based on microwave sources, can be attained with broadband optical pulses. One promising ultrafast technique utilizes single broadband pulses detuned from resonance in a three-level Lambda system [4]. This attractive technique is robust against optical pulse imperfections and does not require a fixed optical reference phase. Here we demonstrate the principle of coherent manipulation of spins theoretically and experimentally. Using this technique, donor-bound electron spin rotations with single-pulse areas exceeding pi/4 and two-pulses areas exceeding pi/2 are demonstrated. We believe the maximum pulse areas attained do not reflect a fundamental limit of the technique and larger pulse areas could be achieved in other material systems. This technique has applications from basic solid-state ESR spectroscopy to arbitrary single-qubit rotations [4, 5] and bang-bang control[6] for quantum computation.
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators.
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work we produce tens of thousands of individually addressable `$T$ centre photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
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