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Register a new userUltrafast control of donor-bound electron spins with single detuned optical pulses
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The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control operating on the picosecond or faster timescale may be necessary. Such speeds, which are not possible to attain with standard electron spin resonance (ESR) techniques based on microwave sources, can be attained with broadband optical pulses. One promising ultrafast technique utilizes single broadband pulses detuned from resonance in a three-level Lambda system [4]. This attractive technique is robust against optical pulse imperfections and does not require a fixed optical reference phase. Here we demonstrate the principle of coherent manipulation of spins theoretically and experimentally. Using this technique, donor-bound electron spin rotations with single-pulse areas exceeding pi/4 and two-pulses areas exceeding pi/2 are demonstrated. We believe the maximum pulse areas attained do not reflect a fundamental limit of the technique and larger pulse areas could be achieved in other material systems. This technique has applications from basic solid-state ESR spectroscopy to arbitrary single-qubit rotations [4, 5] and bang-bang control[6] for quantum computation.
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The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision measurements. The TB electronic structure calculations included over 3 million atoms. In contrast to previous effective mass based results, the quadratic Stark coefficient obtained from both theories agrees closely with the experiments. This work represents the most sensitive and precise comparison between theory and experiment for single donor spin control. It is also shown that there is a significant linear Stark effect for an impurity near the interface, whereas, far from the interface, the quadratic Stark effect dominates. Such precise control of single donor spin states is required particularly in quantum computing applications of single donor electronics, which forms the driving motivation of this work.
The possibility of quantum computing with spins in germanium nanoscale transistors has recently attracted interest since it promises highly tuneable qubits that have encouraging coherence times. We here present the first complete theory of the orbital states of Ge donor electrons, and use it to show that Ge could have significant advantages over silicon in the implementation of a donor-based quantum processor architecture. We show that the stronger spin-orbit interaction and the larger electron donor wave functions for Ge donors allow for greater tuning of the single qubit energy than for those in Si crystals, thus enabling a large speedup of selective (local) quantum gates. Further, exchange coupling between neighboring donor qubits is shown to be much larger in Ge than in Si, and we show that this greatly relaxes the precision in donor placement needed for robust two-qubit gates. To do this we compare two statistical distributions for Ge:P and Si:P pair couplings, corresponding to realistic donor implantation misplacement, and find that the spin couplings in Ge:P have a $33%$ chance of being within an order of magnitude of the largest coupling, compared with only $10%$ for the Si:P donors. This allows fast, parallel and robust architectures for quantum computing with donors in Ge.
Pulsed excitation of broad spectra requires very high field strengths if monochromatic pulses are used. If the corresponding high power is not available or not desirable, the pulses can be replaced by suitable low-power pulses that distribute the power over a wider bandwidth. As a simple case, we use microwave pulses with a linear frequency chirp. We use these pulses to excite spectra of single NV-centers in a Ramsey experiment. Compared to the conventional Ramsey experiment, our approach increases the bandwidth by at least an order of magnitude. Compared to the conventional ODMR experiment, the chirped Ramsey experiment does not suffer from power broadening and increases the resolution by at least an order of magnitude. As an additional benefit, the chirped Ramsey spectrum contains not only `allowed single quantum transitions, but also `forbidden zero- and double quantum transitions, which can be distinguished from the single quantum transitions by phase-shifting the readout pulse with respect to the excitation pulse or by variation of the external magnetic field strength.
Precise readout of spin states is crucial for any approach towards physical realization of a spin-based quantum computer and for magnetometry with single spins. Here, we report a new method to strongly improve the optical readout fidelity of electron spin states associated with single nitrogen-vacancy (NV) centers in diamond. The signal-to-noise ratio is enhanced significantly by performing conditional flip-flop processes between the electron spin and the nuclear spin of the NV centers nitrogen atom. The enhanced readout procedure is triggered by a short preparatory pulse sequence. As the nitrogen nuclear spin is intrinsically present in the system, this method is universally applicable to any nitrogen-vacancy center.
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge state control and broad Stark shift tuning exceeding 850 GHz. Surprisingly, we show that charge depletion results in a narrowing of the optical linewidths by over 50 fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while utilizing classical semiconductor devices to control scalable spin-based quantum systems.
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