Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userCharacterization and Modeling of Native MOSFETs Down to 4.2 K
153
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on the standard threshold voltage (SVT) and low threshold voltage (LVT) MOSFETs. In this paper, we characterize native MOSFETs within the temperature range from 300K to 4.2K. The cryogenic Vth increases up to ~0.25V (W/L=10um/10um) and the improved subthreshold swing (SS)~14.30mV/[email protected]. The off-state current (Ioff) and the gate-induced drain leakage (GIDL) effect are ameliorated greatly. The step-up effect caused by the substrate charge and the transconductance peak effect caused by the energy quantization in different sub-bands are also discussed. Based on the EKV model, we modified the mobility calculation equations and proposed a compact model of large size native MOSFETs suitable for the range of 300K to 4.2K. The mobility-related parameters are extracted via a machine learning approach and the temperature dependences of the scattering mechanisms are analyzed. This work is beneficial to both the research on cryogenic MOSFETs modeling and the design of cryogenic CMOS circuits for quantum chips.
rate research
Read More
Wide attention has been focused on cryogenic CMOS (Cryo-CMOS) operation because of its wide application and the improvement of CMOS performance. However, hot carrier degradation (HCD) becomes worsening at cryogenic temperature, which affects the reliability of Cryo-CMOS. Therefore, this article investigates HCD in 0.18 um bulk CMOS at cryogenic temperature down to 4.2 K. Particularly, the relationship between HCD and the current overshoot phenomenon and the influence of substrate bias on HCD are discussed. Besides, we predict the lifetime of the device at 77 K and 4.2 K. It is concluded that cryogenic NMOS cannot reach the ten years commercial standard lifetime at standard drain voltage (VDD). And it is predicted that the reliability requirements can be reached when VDD<1.768V/1.734V at 77K/4.2K. Differently, the lifetime of PMOS is long enough even at low temperatures.
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device physics. We then illustrate how these phenomena can be accounted for in circuit device-models. We find that the design-oriented simplified EKV model can accurately predict the impact of the temperature reduction on the transfer characteristics, back-gate sensitivity, and transconductance efficiency. The presented results aim at extending industry-standard compact models to cryogenic temperatures for the design of cryo- CMOS circuits implemented in a 28 nm FDSOI technology.
Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias conditions at temperatures ranging from 300K down to 4.2K. We extracted their fundamental physical parameters and developed a compact model based on BSIM3V3. In addition to their I-V characteristics, threshold voltage(Vth) values, on/off current ratio, transconductance of the MOS transistors, and resistors on chips are measured at temperatures from 300K down to 4.2K. A simple subcircuit was built to correct the kink effect. This work provides experimental evidence for implementation of cryogenic CMOS technology, a valid industrial tape-out process model, and romotes the application of integrated circuits in cryogenic environments, including quantum measurement and control systems for quantum chips at very low temperatures.
This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The low-temperature transfer characteristics including body-biasing are modeled over a wide temperature range (room temperature down to 4.2,K) using the design-oriented simplified-EKV model. The trends of the free-carrier mobilities versus temperature in long and short-narrow devices are extracted from dc measurements down to 1.4,K and 4.2,K respectively, using a recently-proposed method based on the output conductance. A cryogenic-temperature-induced mobility degradation is observed on long pMOS, leading to a maximum hole mobility around 77,K. This work sets the stage for preparing industrial design kits with physics-based cryogenic compact models, a prerequisite for the successful co-integration of FDSOI CMOS circuits with silicon qubits operating at deep-cryogenic temperatures.
Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes. However, CMOS characteristics for various width/length (W/L) ratios and under different bias conditions still require further research. In addition, no previous works have produced an integrated modeling process for cryo-CMOS technology. In this paper, the results of characterization of Semiconductor Manufacturing International Corporation (SMIC) 0.18 {mu}m CMOS technology at cryogenic temperatures (varying from 300 K to 4.2 K) are presented. Measurements of thin- and thick-oxide NMOS and PMOS devices with different W/L ratios are taken under four distinct bias conditions and at different temperatures. The temperature-dependent parameters are revised and an advanced CMOS model is proposed based on BSIM3v3 at the liquid nitrogen temperature (LNT). The proposed model ensures precision at the LNT and is valid for use in an industrial tape-out process. The proposed method presents a calibration approach for BSIM3v3 that is available at different temperature intervals.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
